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IPW65R080CFDA-VB Product details
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1. IPW65R080CFDA-VB Product Introduction
IPW65R080CFDA-VB is a high-performance N-channel power MOSFET packaged in TO-247 and manufactured using Super Junction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET can withstand a drain-source voltage (VDS) of up to 700V and is suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS=10V) and has a drain current (ID) of up to 47A. These features make it excellent in high-voltage, high-power density applications and suitable for demanding power management systems.
IPW65R080CFDA-VB is a high-performance N-channel power MOSFET packaged in TO-247 and manufactured using Super Junction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET can withstand a drain-source voltage (VDS) of up to 700V and is suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS=10V) and has a drain current (ID) of up to 47A. These features make it excellent in high-voltage, high-power density applications and suitable for demanding power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IPW65R080CFDA-VB Detailed parameter description
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Power consumption**: The specific power consumption depends on the heat dissipation conditions and application
- **Operating temperature range**: Depends on the actual working environment
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Power consumption**: The specific power consumption depends on the heat dissipation conditions and application
- **Operating temperature range**: Depends on the actual working environment
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
3. Application fields and modules of IPW65R080CFDA-VB
1. **High-voltage switching power supply**: IPW65R080CFDA-VB performs well in high-voltage switching power supply. Its high withstand voltage of 700V and on-resistance of 80mΩ enable it to work stably in high-voltage environment, suitable for use in high-power switching power supply modules, improving power efficiency and reducing power loss.
2. **Inverter**: In photovoltaic inverter or other high-voltage inverter applications, this MOSFET provides high voltage tolerance and excellent switching performance. It can effectively handle high-voltage switching in the inverter, improving the overall efficiency and reliability of the system.
3. **Industrial power supply and power module**: Suitable for various industrial power supplies and power modules, including high-voltage power converters and power management systems. The high current carrying capacity and low on-resistance of IPW65R080CFDA-VB can meet the stringent requirements in high-power applications.
4. **Motor control system**: In motor drive systems that require high voltage and high power handling, this MOSFET can provide reliable switching performance. Its high voltage and current capabilities make it an ideal choice for high-voltage motor drive and inverter applications, helping to improve system efficiency and stability.
1. **High-voltage switching power supply**: IPW65R080CFDA-VB performs well in high-voltage switching power supply. Its high withstand voltage of 700V and on-resistance of 80mΩ enable it to work stably in high-voltage environment, suitable for use in high-power switching power supply modules, improving power efficiency and reducing power loss.
2. **Inverter**: In photovoltaic inverter or other high-voltage inverter applications, this MOSFET provides high voltage tolerance and excellent switching performance. It can effectively handle high-voltage switching in the inverter, improving the overall efficiency and reliability of the system.
3. **Industrial power supply and power module**: Suitable for various industrial power supplies and power modules, including high-voltage power converters and power management systems. The high current carrying capacity and low on-resistance of IPW65R080CFDA-VB can meet the stringent requirements in high-power applications.
4. **Motor control system**: In motor drive systems that require high voltage and high power handling, this MOSFET can provide reliable switching performance. Its high voltage and current capabilities make it an ideal choice for high-voltage motor drive and inverter applications, helping to improve system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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