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IPW65R070C6-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPW65R070C6-VB is a high-performance N-channel MOSFET packaged in TO247 and adopts advanced SJ_Multi-EPI technology. The maximum drain-source voltage (VDS) of this MOSFET is 700V, which is suitable for high-voltage applications. Its on-resistance (RDS(ON)) at VGS=10V is 80mΩ, which can maintain low power consumption under high current. The drain current (ID) reaches 47A, ensuring stable operation even under high load conditions. Its gate-source voltage (VGS) range is ±30V, supporting a wide range of control voltages and providing greater design flexibility. IPW65R070C6-VB is suitable for demanding applications such as high-voltage power conversion, inverters and industrial power modules, and can provide efficient switching performance and reliable long-term operation.
IPW65R070C6-VB is a high-performance N-channel MOSFET packaged in TO247 and adopts advanced SJ_Multi-EPI technology. The maximum drain-source voltage (VDS) of this MOSFET is 700V, which is suitable for high-voltage applications. Its on-resistance (RDS(ON)) at VGS=10V is 80mΩ, which can maintain low power consumption under high current. The drain current (ID) reaches 47A, ensuring stable operation even under high load conditions. Its gate-source voltage (VGS) range is ±30V, supporting a wide range of control voltages and providing greater design flexibility. IPW65R070C6-VB is suitable for demanding applications such as high-voltage power conversion, inverters and industrial power modules, and can provide efficient switching performance and reliable long-term operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description:
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 700V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.5V
6. **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
7. **ID (drain current)**: 47A
8. **Technology**: SJ_Multi-EPI technology
9. **Qg (total gate charge)**: 180 nC
10. **Thermal resistance**: Rth(jc) = 0.45°C/W
11. **Turn-on delay time**: 90 ns
12. **Rise time**: 120 ns
13. **Turn-off delay time**: 85 ns
14. **Fall time**: 70 ns
15. **Operating temperature range**: -55°C to 150°C
16. **Ptot (maximum power consumption)**: 350W
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 700V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.5V
6. **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
7. **ID (drain current)**: 47A
8. **Technology**: SJ_Multi-EPI technology
9. **Qg (total gate charge)**: 180 nC
10. **Thermal resistance**: Rth(jc) = 0.45°C/W
11. **Turn-on delay time**: 90 ns
12. **Rise time**: 120 ns
13. **Turn-off delay time**: 85 ns
14. **Fall time**: 70 ns
15. **Operating temperature range**: -55°C to 150°C
16. **Ptot (maximum power consumption)**: 350W
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage switching power supply**: IPW65R070C6-VB performs well in high-voltage switching power supplies, especially in application scenarios that need to handle high voltage and high current. Its high VDS and low RDS(ON) ensure efficient energy conversion, reduce power consumption, and are suitable for power modules with high voltage input and output.
2. **Photovoltaic inverter**: In photovoltaic inverters, this MOSFET is able to handle the high voltage conversion from photovoltaic panels to the grid. Its high withstand voltage characteristics and low on-resistance make it suitable for efficient inverter systems that convert DC to AC, improving the overall energy efficiency and reliability of the system.
3. **Industrial power management**: IPW65R070C6-VB is suitable for use in industrial power management modules, capable of handling power switches under high voltage and high current conditions, ensuring efficient power management in industrial automation and control systems.
4. **Electric vehicle charging equipment**: In electric vehicle charging equipment, this MOSFET is suitable for high voltage conversion modules. It can remain stable under high load conditions and is suitable for fast charging piles and electric vehicle charging management systems to improve charging efficiency.
5. **High-voltage power amplifier**: This MOSFET can stably handle high voltage and high current in high-frequency power amplifier applications, and is suitable for RF power amplification and high-power signal processing to ensure efficient and low-loss signal transmission.
6. **Motor drive system**: IPW65R070C6-VB can also be used in high-power motor drive systems to provide high-voltage, high-current switching control to ensure efficient operation and stable control of motors in high-power applications.
In short, IPW65R070C6-VB is a high-performance MOSFET suitable for a variety of applications that require high voltage and high current processing, providing efficient energy conversion and reliable performance. It is particularly suitable for use in high-voltage switching power supplies, inverters, industrial power management, and electric vehicle charging equipment.
1. **High-voltage switching power supply**: IPW65R070C6-VB performs well in high-voltage switching power supplies, especially in application scenarios that need to handle high voltage and high current. Its high VDS and low RDS(ON) ensure efficient energy conversion, reduce power consumption, and are suitable for power modules with high voltage input and output.
2. **Photovoltaic inverter**: In photovoltaic inverters, this MOSFET is able to handle the high voltage conversion from photovoltaic panels to the grid. Its high withstand voltage characteristics and low on-resistance make it suitable for efficient inverter systems that convert DC to AC, improving the overall energy efficiency and reliability of the system.
3. **Industrial power management**: IPW65R070C6-VB is suitable for use in industrial power management modules, capable of handling power switches under high voltage and high current conditions, ensuring efficient power management in industrial automation and control systems.
4. **Electric vehicle charging equipment**: In electric vehicle charging equipment, this MOSFET is suitable for high voltage conversion modules. It can remain stable under high load conditions and is suitable for fast charging piles and electric vehicle charging management systems to improve charging efficiency.
5. **High-voltage power amplifier**: This MOSFET can stably handle high voltage and high current in high-frequency power amplifier applications, and is suitable for RF power amplification and high-power signal processing to ensure efficient and low-loss signal transmission.
6. **Motor drive system**: IPW65R070C6-VB can also be used in high-power motor drive systems to provide high-voltage, high-current switching control to ensure efficient operation and stable control of motors in high-power applications.
In short, IPW65R070C6-VB is a high-performance MOSFET suitable for a variety of applications that require high voltage and high current processing, providing efficient energy conversion and reliable performance. It is particularly suitable for use in high-voltage switching power supplies, inverters, industrial power management, and electric vehicle charging equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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