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IPW60R299CP-VB Product details
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1. IPW60R299CP-VB Product Introduction
IPW60R299CP-VB is a single-channel N-type MOSFET in TO247 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is as high as 650V, and it can operate stably in a high voltage environment. The gate-source voltage (VGS) is rated at ±30V, and the turn-on voltage (Vth) is 3.5V, enabling it to switch effectively at low gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 300mΩ at a VGS of 10V, and the maximum drain current (ID) is 15A. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and power density, and is suitable for applications requiring high voltage and medium current.
IPW60R299CP-VB is a single-channel N-type MOSFET in TO247 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is as high as 650V, and it can operate stably in a high voltage environment. The gate-source voltage (VGS) is rated at ±30V, and the turn-on voltage (Vth) is 3.5V, enabling it to switch effectively at low gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 300mΩ at a VGS of 10V, and the maximum drain current (ID) is 15A. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and power density, and is suitable for applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IPW60R299CP-VB
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 300mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 15A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: Typical value 1.5°C/W (junction to case)
11. **Power dissipation**: 110W
12. **Switching speed**: Has good switching performance, suitable for high-frequency applications
13. **Package size**: TO247 package, suitable for high-power heat dissipation and installation requirements
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 300mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 15A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: Typical value 1.5°C/W (junction to case)
11. **Power dissipation**: 110W
12. **Switching speed**: Has good switching performance, suitable for high-frequency applications
13. **Package size**: TO247 package, suitable for high-power heat dissipation and installation requirements
Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**: IPW60R299CP-VB is suitable for high voltage switching power supplies, especially in industrial power supplies and high power converters. Its high voltage withstand capability and moderate on-resistance ensure efficient power conversion and is widely used in devices that require a stable power supply, such as power adapters and power conversion modules.
2. **Solar Inverter**: This MOSFET also has important applications in solar photovoltaic inverters. Its high voltage and medium current handling capabilities enable it to effectively handle the power conversion needs in solar power generation systems, while its good switching performance helps improve the overall efficiency of the system.
3. **Electric Vehicle Charger**: IPW60R299CP-VB can be used in electric vehicle chargers to handle the high voltage requirements during charging. It is able to provide reliable current during charging and maintain high efficiency, making it suitable for fast chargers and high power charging systems.
4. **High-voltage DC-DC converter**: In high-voltage DC-DC converters, the high voltage withstand capability and moderate on-resistance of this MOSFET ensure efficient conversion of electrical energy. It is suitable for high-voltage power electronic equipment, such as communication base station power supplies and voltage conversion modules in industrial control systems.
5. **Motor drive system**: IPW60R299CP-VB is also suitable for high-voltage motor drive systems. When driving high-power motors, this MOSFET can provide the necessary current and maintain high efficiency of the system, and is often used in applications such as industrial motor control and power tools.
As a high-voltage, medium-current MOSFET, IPW60R299CP-VB is suitable for applications with high power density and high efficiency requirements, such as switching power supplies, solar inverters, electric vehicle chargers, high-voltage DC-DC converters, and motor drive systems. Its SJ_Multi-EPI technology ensures excellent switching performance and stability, and is suitable for power electronic systems in a variety of harsh environments.
1. **Switching Power Supply (SMPS)**: IPW60R299CP-VB is suitable for high voltage switching power supplies, especially in industrial power supplies and high power converters. Its high voltage withstand capability and moderate on-resistance ensure efficient power conversion and is widely used in devices that require a stable power supply, such as power adapters and power conversion modules.
2. **Solar Inverter**: This MOSFET also has important applications in solar photovoltaic inverters. Its high voltage and medium current handling capabilities enable it to effectively handle the power conversion needs in solar power generation systems, while its good switching performance helps improve the overall efficiency of the system.
3. **Electric Vehicle Charger**: IPW60R299CP-VB can be used in electric vehicle chargers to handle the high voltage requirements during charging. It is able to provide reliable current during charging and maintain high efficiency, making it suitable for fast chargers and high power charging systems.
4. **High-voltage DC-DC converter**: In high-voltage DC-DC converters, the high voltage withstand capability and moderate on-resistance of this MOSFET ensure efficient conversion of electrical energy. It is suitable for high-voltage power electronic equipment, such as communication base station power supplies and voltage conversion modules in industrial control systems.
5. **Motor drive system**: IPW60R299CP-VB is also suitable for high-voltage motor drive systems. When driving high-power motors, this MOSFET can provide the necessary current and maintain high efficiency of the system, and is often used in applications such as industrial motor control and power tools.
As a high-voltage, medium-current MOSFET, IPW60R299CP-VB is suitable for applications with high power density and high efficiency requirements, such as switching power supplies, solar inverters, electric vehicle chargers, high-voltage DC-DC converters, and motor drive systems. Its SJ_Multi-EPI technology ensures excellent switching performance and stability, and is suitable for power electronic systems in a variety of harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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