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IPW60R250CP-VB Product details

Product introduction:

1. IPW60R250CP-VB Product Introduction

IPW60R250CP-VB is a single N-channel power MOSFET in TO247 package, designed for high voltage applications, with a maximum drain-source voltage of 650V, capable of handling higher voltage requirements. The device has a gate-source voltage of ±30V and a threshold voltage of 3.5V. Its on-resistance is 160mΩ@VGS=10V, and the maximum drain current is 20A. This MOSFET uses Super Junction (SJ_Multi-EPI) technology to ensure high efficiency and low loss in high-voltage applications. It is particularly suitable for switching power supplies, power conversion and other fields, providing excellent energy efficiency and thermal management capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. Detailed parameter description

- **Package**: TO247
- **Type**: Single N-channel
- **VDS** (drain-source voltage): 650V
- **VGS** (gate-source voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 160mΩ@VGS=10V
- **ID** (drain current): 20A
- **Technology**: Superjunction (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C ~ 150°C

This MOSFET combines high voltage tolerance and low on-resistance, suitable for high-power power management and switching applications.

Domain and module applications:

3. Application fields and module examples

IPW60R250CP-VB is suitable for the following fields:

1. **Industrial-grade switching power supply (SMPS)**:
- This device performs well in switch-mode power supplies, especially for applications that handle high voltage input and output, such as industrial power conversion systems. Its low on-resistance and high current handling capabilities ensure efficient power conversion and stability.

2. **Lighting drive circuit**:
- Suitable for high-power LED lighting drive circuits, especially in applications that require high voltage control. IPW60R250CP-VB is able to provide stable current and voltage output, ensuring long-term reliable operation of the lighting system.

3. **Uninterruptible power supply (UPS)**:
- In UPS systems, this MOSFET is used as the core device of the inverter and rectifier, which can handle high voltage conversion and provide low loss and high efficiency, ensuring the smooth operation and stable output power of the UPS system.

4. **Electric Vehicle Charging Equipment**:
- Due to its high voltage handling capability and efficient current handling capability, this MOSFET is very suitable for use in electric vehicle charging systems, and can efficiently handle the high current demand during charging while ensuring the safety and energy efficiency of the system.

The high voltage handling capability and low on-resistance of the IPW60R250CP-VB make it widely used in high-power switching power supplies, lighting drive circuits, UPS, and electric vehicle charging equipment. Its excellent efficiency and durability make it an ideal choice in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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