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IPW60R199CP-VB Product details
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1. IPW60R199CP-VB Product Introduction
IPW60R199CP-VB is a high-voltage N-channel MOSFET in TO247 package, designed for high-voltage and high-efficiency applications. Its maximum drain-source voltage is 650V, drain current is 20A, and it uses SJ_Multi-EPI (super junction multi-epitaxial) technology to achieve low on-resistance (RDS(ON)) at high voltage. This MOSFET performs well in various power management and power conversion applications, and is particularly suitable for scenarios requiring high power density and high efficiency.
IPW60R199CP-VB is a high-voltage N-channel MOSFET in TO247 package, designed for high-voltage and high-efficiency applications. Its maximum drain-source voltage is 650V, drain current is 20A, and it uses SJ_Multi-EPI (super junction multi-epitaxial) technology to achieve low on-resistance (RDS(ON)) at high voltage. This MOSFET performs well in various power management and power conversion applications, and is particularly suitable for scenarios requiring high power density and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 125W (at 25°C)
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 125W (at 25°C)
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency switching power supply (SMPS)**: IPW60R199CP-VB is suitable for medium and high power switching power supply systems, such as AC-DC and DC-DC converters. Its high voltage withstand capability of 650V and relatively low on-resistance enable it to reduce losses and improve overall system efficiency in efficient energy conversion applications.
2. **Industrial automation and drive**: In industrial control systems and motor drives, IPW60R199CP-VB provides high voltage control capability and stable current output, which is very suitable for scenarios requiring high voltage and high reliability, such as industrial inverters and motor controllers.
3. **Renewable energy system**: In wind and solar inverters, this MOSFET can efficiently manage the high voltage and high power during the inverter process, ensuring stability and efficiency when converting energy from DC to AC. In addition, it can also be used in high-power battery management and energy storage systems.
4. **Power Factor Correction (PFC)**: IPW60R199CP-VB is also widely used in modules that require high voltage and high-efficiency power factor correction. In these applications, this MOSFET can reduce losses, improve energy efficiency and ensure stable operation of the system.
Through these examples of application areas, IPW60R199CP-VB plays an important role in applications that require high voltage, high power and high efficiency. Its powerful performance makes it an ideal choice for industrial, renewable energy and power electronics fields.
1. **High-efficiency switching power supply (SMPS)**: IPW60R199CP-VB is suitable for medium and high power switching power supply systems, such as AC-DC and DC-DC converters. Its high voltage withstand capability of 650V and relatively low on-resistance enable it to reduce losses and improve overall system efficiency in efficient energy conversion applications.
2. **Industrial automation and drive**: In industrial control systems and motor drives, IPW60R199CP-VB provides high voltage control capability and stable current output, which is very suitable for scenarios requiring high voltage and high reliability, such as industrial inverters and motor controllers.
3. **Renewable energy system**: In wind and solar inverters, this MOSFET can efficiently manage the high voltage and high power during the inverter process, ensuring stability and efficiency when converting energy from DC to AC. In addition, it can also be used in high-power battery management and energy storage systems.
4. **Power Factor Correction (PFC)**: IPW60R199CP-VB is also widely used in modules that require high voltage and high-efficiency power factor correction. In these applications, this MOSFET can reduce losses, improve energy efficiency and ensure stable operation of the system.
Through these examples of application areas, IPW60R199CP-VB plays an important role in applications that require high voltage, high power and high efficiency. Its powerful performance makes it an ideal choice for industrial, renewable energy and power electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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