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IPW60R190E6-VB Product details

Product introduction:

IPW60R190E6-VB Product Introduction
IPW60R190E6-VB is an N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is up to 650V, the gate-source voltage (VGS) is ±30V, and the maximum drain current is 20A, which is suitable for use in high power conversion scenarios. This MOSFET uses SJ (super junction) multi-epitaxial technology (SJ_Multi-EPI) to provide low on-resistance (160mΩ @ VGS=10V) in a high voltage environment, effectively reducing power consumption and improving system efficiency. It is very suitable for efficient power management applications in industrial and consumer electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
IPW60R190E6-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI super junction multi-epitaxial technology
- **Other features**:
- High voltage and high current handling capability
- Low on-resistance, reduced power loss
- Super junction technology provides higher efficiency and switching speed
- High reliability and thermal management capabilities, suitable for harsh application scenarios

Domain and module applications:

Applications and module examples
1. **Industrial power converters**: The IPW60R190E6-VB is particularly suitable for industrial AC-DC and DC-DC power converters, providing efficient current transmission under high voltage operating conditions. Its low on-resistance and high current handling capability ensure high efficiency and low power consumption, making it suitable for use in power management modules in large industrial equipment.

2. **Photovoltaic inverters**: In solar photovoltaic systems, the IPW60R190E6-VB can be used in high-efficiency inverter modules to process high-voltage input generated from solar panels and convert it into AC power suitable for use. The device's high voltage capability and high reliability enable it to maintain stable operation in harsh environments.

3. **Electric vehicle chargers**: This MOSFET performs well in high-power chargers for electric vehicles. Its 650V withstand voltage and low on-resistance enable it to quickly handle high-current charging operations, effectively shortening charging time and reducing energy loss during charging.

4. **Uninterruptible Power Supply (UPS) System**: IPW60R190E6-VB is suitable for high voltage switching modules in uninterruptible power supply systems, ensuring rapid response in the event of power failure and providing continuous power support for critical systems. Its fast switching speed and efficient current handling capabilities are particularly important in UPS systems.

With its excellent high voltage, high current handling capabilities and high efficiency, this device is widely used in efficient power conversion and management modules in power electronics, energy systems and the automotive industry.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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