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IPW60R125CP-VB Product details

Product introduction:

IPW60R125CP-VB is a high-voltage single N-channel MOSFET in TO247 package, designed for applications requiring high power and high efficiency. The device uses SJ_Multi-EPI technology, has a high drain-source voltage (VDS) of 650V, can handle a drain current (ID) of up to 47A, and has an on-resistance (RDS(ON)) of 75mΩ at VGS=10V. Its gate-source voltage (VGS) range is ±30V, supporting a wider range of control voltages. This MOSFET is suitable for a variety of high-voltage switching power converters, inverters, and industrial power modules. It can provide low-loss and efficient switching performance, and is especially suitable for industrial-grade and high-voltage power control applications.

2.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
:
Package type: TO247
Channel type: Single N-channel
VDS (drain-source voltage): 650V
VGS (gate-source voltage): ±30V
Vth (threshold voltage): 3.5V
RDS(ON) (on-resistance): 75mΩ @ VGS = 10V
ID (drain current): 47A
Technology: SJ_Multi-EPI technology
Qg (total gate charge): 250 nC
Thermal resistance: Rth(jc) = 0.42°C/W
Turn-on delay time: 80 ns
Rise time: 100 ns
Turn-off delay time: 85 ns
Fall time: 65 ns
Operating temperature range: -55°C to 150°C
Ptot (maximum power dissipation): 350W

Domain and module applications:

3. Application fields and module examples:
Switching mode power supply (SMPS): IPW60R125CP-VB is very suitable for the high-voltage conversion part of the switching mode power supply. Its 650V drain-source voltage enables it to work efficiently under high-voltage input conditions, while the low on-resistance reduces energy loss and improves the conversion efficiency of the entire system.

Photovoltaic inverter: In the inverter module of the photovoltaic system, this MOSFET can be used to convert DC to AC, which is particularly suitable for high-voltage solar panel systems. Its high withstand voltage and low power consumption characteristics can effectively improve the efficiency and stability of the photovoltaic system.

Electric vehicle charging station: In the electric vehicle fast charging pile, IPW60R125CP-VB can be used for high-voltage conversion and power management modules, which can handle high current and high voltage input to ensure the efficiency and safety of the charging system.

Industrial power supply and control system: The device also performs well in the power management module in industrial automation equipment, which can efficiently handle the conversion of high voltage and current, and its high temperature resistance enables it to maintain stable operation in harsh industrial environments.

Power amplifier: IPW60R125CP-VB is also suitable for high-power applications such as RF power amplifiers. It can work stably under high-frequency and high-voltage conditions to ensure low loss and efficient energy conversion during signal transmission.

Servo motor drive: In high-voltage servo motor control modules, IPW60R125CP-VB can handle high power requirements, support efficient energy conversion and precise motor control, and is suitable for precision industrial control and automated production systems.

In short, IPW60R125CP-VB is an ideal choice for a variety of high-power applications that require high-voltage handling, high efficiency and low energy consumption, suitable for power conversion, industrial control, electric vehicles, photovoltaic power generation and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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