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IPW60R125C6-VB Product details
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1. IPW60R125C6-VB Product Introduction
IPW60R125C6-VB is a high-voltage single-channel N-type MOSFET in TO247 package, designed for high-efficiency, high-power density applications. Its drain-source voltage (VDS) is 650V, which can withstand extremely high voltages and ensure good performance in high-voltage applications. The gate-source voltage (VGS) is rated at ±30V, and the turn-on voltage (Vth) is 3.5V, providing sensitive control characteristics. The MOSFET has an on-resistance (RDS(ON)) of 75mΩ (VGS=10V), high current capability, and a maximum drain current (ID) of 47A. This product uses super junction (SJ) and multi-layer epitaxial (Multi-EPI) technology, which has significant improvements in switching speed, energy efficiency and power density, and is very suitable for high-efficiency power electronic equipment.
IPW60R125C6-VB is a high-voltage single-channel N-type MOSFET in TO247 package, designed for high-efficiency, high-power density applications. Its drain-source voltage (VDS) is 650V, which can withstand extremely high voltages and ensure good performance in high-voltage applications. The gate-source voltage (VGS) is rated at ±30V, and the turn-on voltage (Vth) is 3.5V, providing sensitive control characteristics. The MOSFET has an on-resistance (RDS(ON)) of 75mΩ (VGS=10V), high current capability, and a maximum drain current (ID) of 47A. This product uses super junction (SJ) and multi-layer epitaxial (Multi-EPI) technology, which has significant improvements in switching speed, energy efficiency and power density, and is very suitable for high-efficiency power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IPW60R125C6-VB
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 75mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 47A
8. **Technology type**: Super junction (SJ) and multi-epitaxy (Multi-EPI) technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: 1.0°C/W (typical, junction to case)
11. **Power dissipation**: 250W
12. **Switching speed**: Fast switching performance, low Qg (gate charge) and low Eoss (output capacitor energy loss)
13. **Package size**: TO247 package, suitable for high current conduction applications and heat dissipation design
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 75mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 47A
8. **Technology type**: Super junction (SJ) and multi-epitaxy (Multi-EPI) technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: 1.0°C/W (typical, junction to case)
11. **Power dissipation**: 250W
12. **Switching speed**: Fast switching performance, low Qg (gate charge) and low Eoss (output capacitor energy loss)
13. **Package size**: TO247 package, suitable for high current conduction applications and heat dissipation design
Domain and module applications：
3. Application fields and module examples
1. **Switching power supply (SMPS)**: IPW60R125C6-VB is an ideal choice for high-efficiency switching power supplies, especially in industrial and consumer electronic devices. Its high voltage and low on-resistance ensure low power loss and high efficiency. It is widely used in server power supplies, data center power supplies, and consumer power adapters.
2. **Solar inverter**: In solar photovoltaic inverters, the high voltage and current capabilities of this MOSFET enable it to handle the high power requirements in solar power generation systems while maintaining extremely high energy efficiency, which can improve the conversion efficiency of the overall system and is suitable for use in high-power photovoltaic power plants and home solar systems.
3. **Electric vehicle inverter**: IPW60R125C6-VB is widely used in the drive inverter of electric vehicles (EVs). Its low on-resistance and high current capability ensure the efficient operation of the drive motor, while reducing heat loss and improving system reliability. It is suitable for inverter modules of various electric vehicles and hybrid vehicles.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, IPW60R125C6-VB provides reliable high voltage and high current handling capabilities, effectively improving system efficiency and stability, ensuring seamless switching during power failures, and is suitable for UPS devices in industry, data centers, and homes.
5. **High Voltage DC-DC Converter**: In high voltage DC-DC converter applications, this MOSFET provides efficient power conversion and low power loss, and is suitable for power modules in power electronics systems, communication equipment, and industrial control systems.
With the high-performance MOSFET IPW60R125C6-VB, users can achieve higher efficiency and reliability in high-efficiency and high-power density applications such as switching power supplies, solar inverters, electric vehicle inverters, UPS, and high-voltage DC-DC converters. This MOSFET based on SJ_Multi-EPI technology can effectively reduce conduction losses and maintain fast switching performance, making it very suitable for demanding power electronics systems.
1. **Switching power supply (SMPS)**: IPW60R125C6-VB is an ideal choice for high-efficiency switching power supplies, especially in industrial and consumer electronic devices. Its high voltage and low on-resistance ensure low power loss and high efficiency. It is widely used in server power supplies, data center power supplies, and consumer power adapters.
2. **Solar inverter**: In solar photovoltaic inverters, the high voltage and current capabilities of this MOSFET enable it to handle the high power requirements in solar power generation systems while maintaining extremely high energy efficiency, which can improve the conversion efficiency of the overall system and is suitable for use in high-power photovoltaic power plants and home solar systems.
3. **Electric vehicle inverter**: IPW60R125C6-VB is widely used in the drive inverter of electric vehicles (EVs). Its low on-resistance and high current capability ensure the efficient operation of the drive motor, while reducing heat loss and improving system reliability. It is suitable for inverter modules of various electric vehicles and hybrid vehicles.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, IPW60R125C6-VB provides reliable high voltage and high current handling capabilities, effectively improving system efficiency and stability, ensuring seamless switching during power failures, and is suitable for UPS devices in industry, data centers, and homes.
5. **High Voltage DC-DC Converter**: In high voltage DC-DC converter applications, this MOSFET provides efficient power conversion and low power loss, and is suitable for power modules in power electronics systems, communication equipment, and industrial control systems.
With the high-performance MOSFET IPW60R125C6-VB, users can achieve higher efficiency and reliability in high-efficiency and high-power density applications such as switching power supplies, solar inverters, electric vehicle inverters, UPS, and high-voltage DC-DC converters. This MOSFET based on SJ_Multi-EPI technology can effectively reduce conduction losses and maintain fast switching performance, making it very suitable for demanding power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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