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IPW60R099C6-VB Product details
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1. IPW60R099C6-VB Product Introduction
IPW60R099C6-VB is a high voltage single N-channel power MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage is 650V, which is suitable for applications in medium and high voltage environments. The maximum gate-source voltage of this MOSFET is ±30V, and the threshold voltage is 3.5V. Its on-resistance is 75mΩ at VGS=10V, which can effectively reduce power loss under high current conditions. Using Super Junction (SJ_Multi-EPI) technology, this MOSFET provides excellent performance and stability in high voltage and high power applications. IPW60R099C6-VB is suitable for applications that require high voltage tolerance and low conduction loss.
IPW60R099C6-VB is a high voltage single N-channel power MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage is 650V, which is suitable for applications in medium and high voltage environments. The maximum gate-source voltage of this MOSFET is ±30V, and the threshold voltage is 3.5V. Its on-resistance is 75mΩ at VGS=10V, which can effectively reduce power loss under high current conditions. Using Super Junction (SJ_Multi-EPI) technology, this MOSFET provides excellent performance and stability in high voltage and high power applications. IPW60R099C6-VB is suitable for applications that require high voltage tolerance and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package**: TO247
- **Type**: Single N-channel
- **VDS** (drain-source voltage): 650V
- **VGS** (gate-source voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 75mΩ@VGS=10V
- **ID** (drain current): 47A
- **Technology**: Superjunction (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C ~ 150°C
The high voltage withstand capability and low on-resistance of this MOSFET make it excellent in high-power and high-voltage applications.
- **Package**: TO247
- **Type**: Single N-channel
- **VDS** (drain-source voltage): 650V
- **VGS** (gate-source voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 75mΩ@VGS=10V
- **ID** (drain current): 47A
- **Technology**: Superjunction (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C ~ 150°C
The high voltage withstand capability and low on-resistance of this MOSFET make it excellent in high-power and high-voltage applications.
Domain and module applications：
3. Application fields and module examples
The application fields of IPW60R099C6-VB include:
1. **High-voltage switching power supply (SMPS)**:
- In switch-mode power supplies (such as AC-DC and DC-DC converters), this MOSFET can handle voltages up to 650V and is suitable for power modules with high voltage input, providing efficient power conversion and stability.
2. **Power inverter**:
- Used in high-voltage inverter modules, such as solar photovoltaic inverters and industrial-grade inverters. Its high voltage tolerance and low on-resistance can efficiently convert DC power to AC power while maintaining the efficiency and reliability of the system.
3. **High-voltage motor drive**:
- Used in high-voltage motor drive systems, such as motor drives for electric vehicles. The high voltage tolerance and low on-resistance of IPW60R099C6-VB ensure stable drive and high efficiency of the motor.
4. **High Power Load Switch**:
- Suitable for switching operations of high power loads, such as in high power power systems, this MOSFET provides high voltage switching capability and low conduction loss, suitable for handling the switching needs of high power loads.
In general, the high voltage withstand capability, low on-resistance and super junction technology of IPW60R099C6-VB make it perform well in the fields of high voltage power conversion, power inverter, motor drive and high power load switching.
The application fields of IPW60R099C6-VB include:
1. **High-voltage switching power supply (SMPS)**:
- In switch-mode power supplies (such as AC-DC and DC-DC converters), this MOSFET can handle voltages up to 650V and is suitable for power modules with high voltage input, providing efficient power conversion and stability.
2. **Power inverter**:
- Used in high-voltage inverter modules, such as solar photovoltaic inverters and industrial-grade inverters. Its high voltage tolerance and low on-resistance can efficiently convert DC power to AC power while maintaining the efficiency and reliability of the system.
3. **High-voltage motor drive**:
- Used in high-voltage motor drive systems, such as motor drives for electric vehicles. The high voltage tolerance and low on-resistance of IPW60R099C6-VB ensure stable drive and high efficiency of the motor.
4. **High Power Load Switch**:
- Suitable for switching operations of high power loads, such as in high power power systems, this MOSFET provides high voltage switching capability and low conduction loss, suitable for handling the switching needs of high power loads.
In general, the high voltage withstand capability, low on-resistance and super junction technology of IPW60R099C6-VB make it perform well in the fields of high voltage power conversion, power inverter, motor drive and high power load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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