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IPW60R075CP-VB Product details
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1. IPW60R075CP-VB Product Introduction
IPW60R075CP-VB is a high voltage, high current capability N-channel power MOSFET in TO247 package. With a maximum drain-source voltage of 650V, the device is designed to handle high voltage applications while providing good on-resistance and current carrying capacity. It uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, which gives it superior performance under high voltage and high power conditions. Its low on-resistance and high current capability enable it to perform well in high-efficiency power supplies and switching circuits.
IPW60R075CP-VB is a high voltage, high current capability N-channel power MOSFET in TO247 package. With a maximum drain-source voltage of 650V, the device is designed to handle high voltage applications while providing good on-resistance and current carrying capacity. It uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, which gives it superior performance under high voltage and high power conditions. Its low on-resistance and high current capability enable it to perform well in high-efficiency power supplies and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 150W (at 25°C)
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 150W (at 25°C)
Domain and module applications：
3. Application fields and module examples
1. **High voltage switching power supply (SMPS)**: IPW60R075CP-VB is suitable for high voltage switching power supplies, such as medium to high power DC-DC converters. Its high voltage tolerance and low on-resistance enable it to effectively control and convert high voltage power supplies, improve system efficiency and reduce energy loss.
2. **Industrial power management**: In industrial power management systems, such as high voltage motor drives and power distribution systems, this MOSFET provides stable high current and high voltage control capabilities. It can efficiently handle current in these applications and protect the system from overvoltage.
3. **High voltage inverter**: IPW60R075CP-VB is also very suitable for high voltage inverter systems, such as solar inverters or wind inverters. It can operate stably in high voltage environments and ensure efficient conversion of electrical energy, supporting the effective use of renewable energy.
4. **Power Control Module**: In various power control modules, such as high-voltage load switches and overvoltage protection circuits, this MOSFET is able to provide the required high-voltage control capability. Its low on-resistance helps reduce power consumption and improve overall system efficiency.
These application examples show that IPW60R075CP-VB has a wide range of applicability in applications that handle high voltage and high power requirements. Its excellent performance and reliability make it an ideal choice for various high-voltage power management and switching applications.
1. **High voltage switching power supply (SMPS)**: IPW60R075CP-VB is suitable for high voltage switching power supplies, such as medium to high power DC-DC converters. Its high voltage tolerance and low on-resistance enable it to effectively control and convert high voltage power supplies, improve system efficiency and reduce energy loss.
2. **Industrial power management**: In industrial power management systems, such as high voltage motor drives and power distribution systems, this MOSFET provides stable high current and high voltage control capabilities. It can efficiently handle current in these applications and protect the system from overvoltage.
3. **High voltage inverter**: IPW60R075CP-VB is also very suitable for high voltage inverter systems, such as solar inverters or wind inverters. It can operate stably in high voltage environments and ensure efficient conversion of electrical energy, supporting the effective use of renewable energy.
4. **Power Control Module**: In various power control modules, such as high-voltage load switches and overvoltage protection circuits, this MOSFET is able to provide the required high-voltage control capability. Its low on-resistance helps reduce power consumption and improve overall system efficiency.
These application examples show that IPW60R075CP-VB has a wide range of applicability in applications that handle high voltage and high power requirements. Its excellent performance and reliability make it an ideal choice for various high-voltage power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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