IPW60R070C6-VB Product details
Product introduction:
IPW60R070C6-VB is a high-performance single N-channel MOSFET with TO247 package type, using advanced super junction (SJ) and multi-epitaxial (Multi-EPI) technology. This MOSFET can withstand a drain-source voltage (VDS) of up to 650V and operate stably at a gate-source voltage (VGS) of ±30V. Its turn-on voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate-source voltage. The MOSFET has an on-resistance (RDS(ON)) of 75mΩ (@VGS=10V) and a maximum drain current (ID) of 47A, providing strong current handling capabilities. The device is suitable for high voltage and high current applications, providing high efficiency and reliable performance in demanding environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: Super junction (SJ) + Multi-EPI technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (PD)**: Suitable for high power applications
- **Typical switching frequency**: Suitable for high frequency switching applications
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Domain and module applications:
1. **High-efficiency power converters**: The high voltage tolerance and low on-resistance of the IPW60R070C6-VB make it ideal for use in high-efficiency power converters such as AC-DC adapters and DC-DC converters. In these applications, it is able to handle high voltages and high currents, providing efficient power conversion and reducing energy losses.
2. **Motor drives**: In motor control systems, this MOSFET can be used in high-power motor drivers, especially in applications that require high voltages and high currents. Its high current capability and low power loss characteristics ensure stable operation and efficient control of the motor.
3. **Lighting systems**: In high-voltage lighting systems such as LED drivers or high-intensity discharge lamps, the high voltage tolerance and high current capability of the IPW60R070C6-VB make it an ideal switching element. It is able to provide stable current and voltage control in these applications, ensuring efficient operation and long life of the lighting system.
4. **Power protection circuit**: In power protection circuits, such as overvoltage protection and overcurrent protection circuits, the high voltage and current handling capabilities of this MOSFET enable it to effectively protect the power system from overvoltage and overcurrent damage, ensuring the stability and safety of the system.
5. **Industrial control system**: In industrial control systems, especially in high-voltage power management and load control applications, IPW60R070C6-VB can be used as a key switching element to provide efficient current control and stable operating performance.
These applications demonstrate the wide applicability of IPW60R070C6-VB in various electronic and power modules that require high voltage, high current and high efficiency performance.
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