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IPW50R350CP-VB Product details
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1. IPW50R350CP-VB Product Introduction
IPW50R350CP-VB is an N-channel power MOSFET in TO-247 package, manufactured based on Super Junction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET has a maximum drain-source voltage (VDS) of 500V, suitable for high-voltage power applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS=10V), and it can carry a drain current (ID) of up to 40A. This high voltage tolerance and reasonable on-resistance make it excel in high-power, high-voltage applications.
IPW50R350CP-VB is an N-channel power MOSFET in TO-247 package, manufactured based on Super Junction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET has a maximum drain-source voltage (VDS) of 500V, suitable for high-voltage power applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS=10V), and it can carry a drain current (ID) of up to 40A. This high voltage tolerance and reasonable on-resistance make it excel in high-power, high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IPW50R350CP-VB Detailed parameter description
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Power consumption**: Depends on heat dissipation conditions and specific applications
- **Operating temperature range**: Determined by actual application and environmental conditions
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Power consumption**: Depends on heat dissipation conditions and specific applications
- **Operating temperature range**: Determined by actual application and environmental conditions
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
3. Application fields and modules of IPW50R350CP-VB
1. **High-voltage switching power supply (SMPS)**: The 500V withstand voltage of IPW50R350CP-VB makes it very suitable for high-voltage switching power supply design. In the switching power supply, the MOSFET can withstand high voltage and maintain stable conduction performance, which helps to improve the efficiency and reliability of the power supply.
2. **Inverter**: In photovoltaic inverters or other high-power inverters, IPW50R350CP-VB provides high voltage and high current handling capabilities. Its high withstand voltage and reasonable on-resistance enable it to effectively handle high-voltage switches in the inverter and improve the overall performance of the system.
3. **Power module**: In various power modules, such as power converters, industrial power supplies, and power electronic equipment, IPW50R350CP-VB is able to provide high voltage and high current switching capabilities. This makes it excellent in high-power applications and is suitable for power management modules that require high withstand voltage and stability.
4. **Motor Drive**: This MOSFET is also suitable for high-voltage motor drive applications, especially where medium and high voltages need to be handled. Its high current handling capability and high voltage withstand capability make it an ideal choice for high-voltage motor drive systems, helping to improve system efficiency and reliability.
1. **High-voltage switching power supply (SMPS)**: The 500V withstand voltage of IPW50R350CP-VB makes it very suitable for high-voltage switching power supply design. In the switching power supply, the MOSFET can withstand high voltage and maintain stable conduction performance, which helps to improve the efficiency and reliability of the power supply.
2. **Inverter**: In photovoltaic inverters or other high-power inverters, IPW50R350CP-VB provides high voltage and high current handling capabilities. Its high withstand voltage and reasonable on-resistance enable it to effectively handle high-voltage switches in the inverter and improve the overall performance of the system.
3. **Power module**: In various power modules, such as power converters, industrial power supplies, and power electronic equipment, IPW50R350CP-VB is able to provide high voltage and high current switching capabilities. This makes it excellent in high-power applications and is suitable for power management modules that require high withstand voltage and stability.
4. **Motor Drive**: This MOSFET is also suitable for high-voltage motor drive applications, especially where medium and high voltages need to be handled. Its high current handling capability and high voltage withstand capability make it an ideal choice for high-voltage motor drive systems, helping to improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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