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IPW50R299CP-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPW50R299CP-VB is a high-performance N-channel MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The drain-source voltage (VDS) of this MOSFET is as high as 500V, which is suitable for high-voltage applications. Its on-resistance RDS(ON) is 80mΩ at VGS = 10V, ensuring lower power consumption and heat generation under high current conditions. The drain current (ID) reaches 40A, which is suitable for applications that require high current handling. The gate-source voltage (VGS) range is ±30V, making it stable under a variety of control voltage conditions. IPW50R299CP-VB is an ideal choice for high-voltage, high-current switching applications, and can provide reliable performance under harsh operating conditions.
IPW50R299CP-VB is a high-performance N-channel MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The drain-source voltage (VDS) of this MOSFET is as high as 500V, which is suitable for high-voltage applications. Its on-resistance RDS(ON) is 80mΩ at VGS = 10V, ensuring lower power consumption and heat generation under high current conditions. The drain current (ID) reaches 40A, which is suitable for applications that require high current handling. The gate-source voltage (VGS) range is ±30V, making it stable under a variety of control voltage conditions. IPW50R299CP-VB is an ideal choice for high-voltage, high-current switching applications, and can provide reliable performance under harsh operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description:
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 500V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.8V
6. **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
7. **ID (drain current)**: 40A
8. **Technology**: SJ_Multi-EPI technology
9. **Thermal resistance**: Rth(jc) = 0.5°C/W
10. **Qg (total gate charge)**: 200nC
11. **td(on) (turn-on delay time)**: 75 ns
12. **tr (rise time)**: 100 ns
13. **td(off) (turn-off delay time)**: 70 ns
14. **tf (fall time)**: 60 ns
15. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 500V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.8V
6. **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
7. **ID (drain current)**: 40A
8. **Technology**: SJ_Multi-EPI technology
9. **Thermal resistance**: Rth(jc) = 0.5°C/W
10. **Qg (total gate charge)**: 200nC
11. **td(on) (turn-on delay time)**: 75 ns
12. **tr (rise time)**: 100 ns
13. **td(off) (turn-off delay time)**: 70 ns
14. **tf (fall time)**: 60 ns
15. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage power converter**: IPW50R299CP-VB is suitable for switching applications in high-voltage power converters. Its high VDS and high current handling capabilities enable it to work stably in high-voltage environments, reduce power consumption and improve energy efficiency, making it an ideal choice for high-efficiency power supply designs.
2. **Inverter**: In inverter applications, this MOSFET can effectively handle high voltage and high current, ensuring the reliability and stability of the inverter system. Its low RDS(ON) and high current capability make it suitable for use in high-power inverter designs such as frequency converters and power converters.
3. **Power amplifier**: In high-power RF power amplifier applications, IPW50R299CP-VB provides the necessary high voltage tolerance and low power consumption characteristics, can effectively control high-frequency power signals, and is suitable for use in high-frequency amplification and communication equipment.
4. **Electric Vehicles**: In the power management system of electric vehicles, this MOSFET is capable of handling high voltage and high current, and is suitable for use in battery management, motor drive, and high power conversion modules. Its high withstand voltage and low on-resistance help improve the overall efficiency of electric vehicle systems.
5. **Industrial Power Modules**: Used in industrial power modules, the IPW50R299CP-VB is capable of handling high voltage and high current applications, and is suitable for power management of industrial automation equipment to ensure system stability and reliability.
6. **Welding Equipment**: In high-power welding equipment, this MOSFET is capable of handling high current and high voltage, ensuring the stability and efficiency of the welding process. Its low on-resistance and high current handling capability make it suitable for demanding welding applications.
In short, the IPW50R299CP-VB is suitable for a variety of high voltage and high current switching applications, and can provide reliable performance and efficient energy conversion in high voltage environments.
1. **High-voltage power converter**: IPW50R299CP-VB is suitable for switching applications in high-voltage power converters. Its high VDS and high current handling capabilities enable it to work stably in high-voltage environments, reduce power consumption and improve energy efficiency, making it an ideal choice for high-efficiency power supply designs.
2. **Inverter**: In inverter applications, this MOSFET can effectively handle high voltage and high current, ensuring the reliability and stability of the inverter system. Its low RDS(ON) and high current capability make it suitable for use in high-power inverter designs such as frequency converters and power converters.
3. **Power amplifier**: In high-power RF power amplifier applications, IPW50R299CP-VB provides the necessary high voltage tolerance and low power consumption characteristics, can effectively control high-frequency power signals, and is suitable for use in high-frequency amplification and communication equipment.
4. **Electric Vehicles**: In the power management system of electric vehicles, this MOSFET is capable of handling high voltage and high current, and is suitable for use in battery management, motor drive, and high power conversion modules. Its high withstand voltage and low on-resistance help improve the overall efficiency of electric vehicle systems.
5. **Industrial Power Modules**: Used in industrial power modules, the IPW50R299CP-VB is capable of handling high voltage and high current applications, and is suitable for power management of industrial automation equipment to ensure system stability and reliability.
6. **Welding Equipment**: In high-power welding equipment, this MOSFET is capable of handling high current and high voltage, ensuring the stability and efficiency of the welding process. Its low on-resistance and high current handling capability make it suitable for demanding welding applications.
In short, the IPW50R299CP-VB is suitable for a variety of high voltage and high current switching applications, and can provide reliable performance and efficient energy conversion in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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