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IPW50R250CP-VB Product details
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1. IPW50R250CP-VB Product Introduction
IPW50R250CP-VB is a high-performance single-channel N-type MOSFET in TO247 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and can operate stably in a high voltage environment. The turn-on voltage (Vth) of this MOSFET is 3.8V, and its on-resistance (RDS(ON)) is 80mΩ at a VGS of 10V, which can provide reliable conduction performance in high current applications. The maximum drain current (ID) is 40A, and the SJ_Multi-EPI technology is used to ensure excellent switching performance and low thermal resistance, which is very suitable for high power density applications.
IPW50R250CP-VB is a high-performance single-channel N-type MOSFET in TO247 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and can operate stably in a high voltage environment. The turn-on voltage (Vth) of this MOSFET is 3.8V, and its on-resistance (RDS(ON)) is 80mΩ at a VGS of 10V, which can provide reliable conduction performance in high current applications. The maximum drain current (ID) is 40A, and the SJ_Multi-EPI technology is used to ensure excellent switching performance and low thermal resistance, which is very suitable for high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IPW50R250CP-VB
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical value 1.1°C/W (junction to case)
11. **Power dissipation**: Typical value 100W
12. **Package size**: TO247 package, suitable for through-hole soldering or heat sink mounting
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical value 1.1°C/W (junction to case)
11. **Power dissipation**: Typical value 100W
12. **Package size**: TO247 package, suitable for through-hole soldering or heat sink mounting
Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**: IPW50R250CP-VB is widely used in high-voltage switching power supplies. Its high drain-source voltage and moderate on-resistance make it excellent in power conversion, helping to improve the efficiency and stability of the power supply, and is suitable for industrial and consumer power supply equipment.
2. **Power Inverter**: In power inverters, especially for solar inverters and electric vehicle inverters, this MOSFET can handle high voltage and high current, ensuring the stability and efficiency of the inverter at high power, and its low thermal resistance helps to improve the reliability of the inverter.
3. **Motor Drive Control**: IPW50R250CP-VB is suitable for high-voltage motor drive control systems. Its high voltage handling capability and high current capability enable it to handle the high power requirements during motor startup and operation, while its low on-resistance can reduce power losses.
4. **High-voltage DC-DC converter**: In high-voltage DC-DC converter applications, the high drain-source voltage and low on-resistance of this MOSFET help optimize the performance of the converter, improve conversion efficiency, and reduce heat generation, making it suitable for use in power electronics and communication equipment.
5. **Power amplifier**: In power amplifier applications that need to handle high power, the high voltage and high current capabilities of the IPW50R250CP-VB enable it to operate stably and provide efficient power amplification, making it suitable for use in broadcast and audio equipment.
In short, the IPW50R250CP-VB, with its high voltage, high current capabilities and moderate on-resistance, is widely used in switching power supplies, power inverters, motor drive control, high-voltage DC-DC converters, and power amplifiers. Its SJ_Multi-EPI technology ensures excellent performance under high power density and high efficiency requirements.
1. **Switching Power Supply (SMPS)**: IPW50R250CP-VB is widely used in high-voltage switching power supplies. Its high drain-source voltage and moderate on-resistance make it excellent in power conversion, helping to improve the efficiency and stability of the power supply, and is suitable for industrial and consumer power supply equipment.
2. **Power Inverter**: In power inverters, especially for solar inverters and electric vehicle inverters, this MOSFET can handle high voltage and high current, ensuring the stability and efficiency of the inverter at high power, and its low thermal resistance helps to improve the reliability of the inverter.
3. **Motor Drive Control**: IPW50R250CP-VB is suitable for high-voltage motor drive control systems. Its high voltage handling capability and high current capability enable it to handle the high power requirements during motor startup and operation, while its low on-resistance can reduce power losses.
4. **High-voltage DC-DC converter**: In high-voltage DC-DC converter applications, the high drain-source voltage and low on-resistance of this MOSFET help optimize the performance of the converter, improve conversion efficiency, and reduce heat generation, making it suitable for use in power electronics and communication equipment.
5. **Power amplifier**: In power amplifier applications that need to handle high power, the high voltage and high current capabilities of the IPW50R250CP-VB enable it to operate stably and provide efficient power amplification, making it suitable for use in broadcast and audio equipment.
In short, the IPW50R250CP-VB, with its high voltage, high current capabilities and moderate on-resistance, is widely used in switching power supplies, power inverters, motor drive control, high-voltage DC-DC converters, and power amplifiers. Its SJ_Multi-EPI technology ensures excellent performance under high power density and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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