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IPU135N08N3 G-VB Product details
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1. IPU135N08N3 G-VB Product Introduction
IPU135N08N3 G-VB is a high-performance single N-channel power MOSFET in TO251 package, designed for high current and high efficiency applications. Its maximum drain-source voltage is 80V and the maximum gate-source voltage is ±20V, which is suitable for applications in the medium voltage range. The threshold voltage of this MOSFET is 3V and it has a low on-resistance of 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V, which makes it perform well under high current conditions and reduces power loss. IPU135N08N3 G-VB uses Trench technology, which provides excellent switching speed and efficiency. This MOSFET is particularly suitable for applications that require high current handling capability and low conduction losses.
IPU135N08N3 G-VB is a high-performance single N-channel power MOSFET in TO251 package, designed for high current and high efficiency applications. Its maximum drain-source voltage is 80V and the maximum gate-source voltage is ±20V, which is suitable for applications in the medium voltage range. The threshold voltage of this MOSFET is 3V and it has a low on-resistance of 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V, which makes it perform well under high current conditions and reduces power loss. IPU135N08N3 G-VB uses Trench technology, which provides excellent switching speed and efficiency. This MOSFET is particularly suitable for applications that require high current handling capability and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Package**: TO251
- **Type**: Single N-channel
- **VDS** (drain-source voltage): 80V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): 3V
- **RDS(ON)** (on-resistance): 8.7mΩ@VGS=4.5V, 6.4mΩ@VGS=10V
- **ID** (drain current): 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
The low on-resistance and high current handling capability of this MOSFET make it excellent in high-efficiency power management and control applications.
- **Package**: TO251
- **Type**: Single N-channel
- **VDS** (drain-source voltage): 80V
- **VGS** (gate-source voltage): ±20V
- **Vth** (threshold voltage): 3V
- **RDS(ON)** (on-resistance): 8.7mΩ@VGS=4.5V, 6.4mΩ@VGS=10V
- **ID** (drain current): 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
The low on-resistance and high current handling capability of this MOSFET make it excellent in high-efficiency power management and control applications.
Domain and module applications：
3. Application fields and module examples
The application fields of IPU135N08N3 G-VB include:
1. **High-efficiency switching power supply (SMPS)**:
- In switch-mode power supplies (such as DC-DC converters), especially in power modules that require high current and low power loss, this MOSFET provides low on-resistance and optimizes power conversion efficiency.
2. **Motor drive control**:
- Used in high-current motor drive systems such as electric vehicle motor drives and industrial motor control. Its high current carrying capacity and low on-resistance ensure efficient and stable drive of the motor.
3. **LED drive circuit**:
- In LED lighting systems, especially in high-power LED drive applications, this MOSFET can efficiently drive LED lamps, reduce power loss, and improve system efficiency.
4. **Battery Management System**:
- Suitable for battery management systems, such as battery management in electric vehicles or portable devices, providing stable current control and low power consumption characteristics, improving the energy efficiency and reliability of the system.
In general, the high current capability, low on-resistance and Trench technology of IPU135N08N3 G-VB make it excel in fields such as high-efficiency switching power supplies, motor drives, LED lighting and battery management systems.
The application fields of IPU135N08N3 G-VB include:
1. **High-efficiency switching power supply (SMPS)**:
- In switch-mode power supplies (such as DC-DC converters), especially in power modules that require high current and low power loss, this MOSFET provides low on-resistance and optimizes power conversion efficiency.
2. **Motor drive control**:
- Used in high-current motor drive systems such as electric vehicle motor drives and industrial motor control. Its high current carrying capacity and low on-resistance ensure efficient and stable drive of the motor.
3. **LED drive circuit**:
- In LED lighting systems, especially in high-power LED drive applications, this MOSFET can efficiently drive LED lamps, reduce power loss, and improve system efficiency.
4. **Battery Management System**:
- Suitable for battery management systems, such as battery management in electric vehicles or portable devices, providing stable current control and low power consumption characteristics, improving the energy efficiency and reliability of the system.
In general, the high current capability, low on-resistance and Trench technology of IPU135N08N3 G-VB make it excel in fields such as high-efficiency switching power supplies, motor drives, LED lighting and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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