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IPU103N08N3 G-VB Product details
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1. IPU103N08N3 G-VB Product Introduction
IPU103N08N3 G-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for high power and low loss applications. The device has a drain-source voltage of 80V and a maximum current carrying capacity of 75A. It uses Trench technology, which makes it have low on-resistance and high efficiency. It provides lower on-resistance at different gate drive voltages, which is very suitable for efficient switching and current management applications.
IPU103N08N3 G-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for high power and low loss applications. The device has a drain-source voltage of 80V and a maximum current carrying capacity of 75A. It uses Trench technology, which makes it have low on-resistance and high efficiency. It provides lower on-resistance at different gate drive voltages, which is very suitable for efficient switching and current management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 150W (at 25°C)
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 150W (at 25°C)
Domain and module applications：
3. Application fields and module examples
1. **Automotive electronic control system**: IPU103N08N3 G-VB is very suitable for switches and power control modules in automotive electronic systems. Its high current carrying capacity and low on-resistance make it suitable for use in power management systems of electric vehicles, such as DC-DC converters and motor drive modules, improving system efficiency and reducing heat loss.
2. **Load switching circuit**: In efficient load switching applications, this MOSFET provides low loss and high current capability, suitable for circuits that need to switch quickly and control large currents, such as switch modules in battery management systems (BMS).
3. **Switching power supply (SMPS)**: IPU103N08N3 G-VB can effectively manage large current and voltage switching in switching power supplies, especially in medium and high power DC-DC power modules, improving conversion efficiency by reducing switching losses.
4. **Consumer Electronics Power Management**: In consumer electronics such as smartphones and laptops, this MOSFET is suitable for power regulators and current control modules in power management ICs, which can effectively improve power efficiency and extend battery life.
Through these examples of fields and applications, the IPU103N08N3 G-VB plays an important role in power management applications that require high efficiency and low loss, and its excellent performance indicators make it an ideal choice for demanding applications.
1. **Automotive electronic control system**: IPU103N08N3 G-VB is very suitable for switches and power control modules in automotive electronic systems. Its high current carrying capacity and low on-resistance make it suitable for use in power management systems of electric vehicles, such as DC-DC converters and motor drive modules, improving system efficiency and reducing heat loss.
2. **Load switching circuit**: In efficient load switching applications, this MOSFET provides low loss and high current capability, suitable for circuits that need to switch quickly and control large currents, such as switch modules in battery management systems (BMS).
3. **Switching power supply (SMPS)**: IPU103N08N3 G-VB can effectively manage large current and voltage switching in switching power supplies, especially in medium and high power DC-DC power modules, improving conversion efficiency by reducing switching losses.
4. **Consumer Electronics Power Management**: In consumer electronics such as smartphones and laptops, this MOSFET is suitable for power regulators and current control modules in power management ICs, which can effectively improve power efficiency and extend battery life.
Through these examples of fields and applications, the IPU103N08N3 G-VB plays an important role in power management applications that require high efficiency and low loss, and its excellent performance indicators make it an ideal choice for demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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