IPU06N03-VB Product details
Product introduction:
IPU06N03-VB is an N-channel MOSFET in TO251 package, suitable for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 100A. It has extremely low on-resistance, ensuring efficient power transmission. Its 1.7V threshold voltage enables the device to achieve efficient switching under low gate drive. IPU06N03-VB uses advanced Trench technology, which provides low conduction losses while having fast switching capabilities, and is particularly suitable for applications requiring high efficiency and high power density.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Other features**:
- Low on-resistance, reduced power loss
- High current handling capability, suitable for high power applications
- Fast switching performance, improved system efficiency
Domain and module applications:
1. **Battery management system**: IPU06N03-VB is suitable for battery protection and charge and discharge control modules in battery management systems. Its low on-resistance and high current handling capability make it very suitable for use in lithium-ion battery packs, which can effectively improve the charging and discharging efficiency and reduce system power loss.
2. **DC-DC converter**: This MOSFET is very suitable for use in low-voltage DC-DC converters, especially in mobile devices, portable electronic devices and other occasions that require high efficiency and compact design. Its low on-resistance can reduce the loss during power conversion and improve the overall efficiency of the system.
3. **Automotive electronic system**: In the low-voltage power supply system of the car, IPU06N03-VB can be used to drive and control electric systems, such as electric seats, lighting and other electric accessories. Its high current handling capability and low conduction loss can meet the power requirements of the automotive system while ensuring stable operation of the equipment.
4. **Power Switching Circuit**: In high current power management and power switching applications, the high switching speed and low loss characteristics of IPU06N03-VB make it very suitable for modules such as power tools, servo systems and industrial power supplies, providing efficient current transmission and fast response capabilities.
These applications demonstrate the wide application of IPU06N03-VB in low voltage and high current environments, especially playing an important role in systems that require high efficiency and high power density.
Technical support:
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