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IPS118N10N G-VB Product details
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1. IPS118N10N G-VB Product Introduction
IPS118N10N G-VB is a high-performance single-channel N-type MOSFET in TO251 package, designed for high-current application scenarios, capable of withstanding a drain-source voltage of 100V and with a continuous drain current capability of 65A. Its low on-resistance (R_DS(ON) = 12.5mΩ @ V_GS=10V) significantly reduces power loss under high current conditions, improving system efficiency and performance. The device uses Trench technology to optimize switching speed and thermal management characteristics, ensuring efficient power transmission and system stability, and is suitable for multiple fields such as industry, automotive electronics, and power management.
IPS118N10N G-VB is a high-performance single-channel N-type MOSFET in TO251 package, designed for high-current application scenarios, capable of withstanding a drain-source voltage of 100V and with a continuous drain current capability of 65A. Its low on-resistance (R_DS(ON) = 12.5mΩ @ V_GS=10V) significantly reduces power loss under high current conditions, improving system efficiency and performance. The device uses Trench technology to optimize switching speed and thermal management characteristics, ensuring efficient power transmission and system stability, and is suitable for multiple fields such as industry, automotive electronics, and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. IPS118N10N G-VB detailed parameter description
- **Model**: IPS118N10N G-VB
- **Package type**: TO251
- **Configuration**: Single channel N type
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: 20V (±)
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 12.5mΩ @ V_GS=10V
- **Drain current (I_D)**: 65A
- **Technology process**: Trench
**Parameter details**:
1. **Package type (TO251)**: TO251 package has good thermal performance and is suitable for high-power application scenarios that require strict heat dissipation management.
2. **Single-channel N-type design**: Supports precise current control and is suitable for various switch regulation and power conversion applications.
3. **Drain-source voltage (V_DS = 100V)**: Suitable for medium and high voltage power switches and inverters.
4. **Gate-source voltage (V_GS = 20V)**: Higher gate voltage improves operating stability and is suitable for harsh working conditions.
5. **Threshold voltage (V_th = 1.8V)**: Lower threshold voltage enables good switching performance and faster response speed in low voltage applications.
6. **On-resistance (R_DS(ON) = 12.5mΩ @ V_GS=10V)**: Low on-resistance reduces power loss and improves system efficiency in high current applications.
7. **Drain current (I_D = 65A)**: High current carrying capacity ensures stable and reliable performance in high current demand applications.
8. **Trench technology**: Trench technology optimizes the electrical performance of the device, providing faster switching speed and lower conduction loss.
- **Model**: IPS118N10N G-VB
- **Package type**: TO251
- **Configuration**: Single channel N type
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: 20V (±)
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 12.5mΩ @ V_GS=10V
- **Drain current (I_D)**: 65A
- **Technology process**: Trench
**Parameter details**:
1. **Package type (TO251)**: TO251 package has good thermal performance and is suitable for high-power application scenarios that require strict heat dissipation management.
2. **Single-channel N-type design**: Supports precise current control and is suitable for various switch regulation and power conversion applications.
3. **Drain-source voltage (V_DS = 100V)**: Suitable for medium and high voltage power switches and inverters.
4. **Gate-source voltage (V_GS = 20V)**: Higher gate voltage improves operating stability and is suitable for harsh working conditions.
5. **Threshold voltage (V_th = 1.8V)**: Lower threshold voltage enables good switching performance and faster response speed in low voltage applications.
6. **On-resistance (R_DS(ON) = 12.5mΩ @ V_GS=10V)**: Low on-resistance reduces power loss and improves system efficiency in high current applications.
7. **Drain current (I_D = 65A)**: High current carrying capacity ensures stable and reliable performance in high current demand applications.
8. **Trench technology**: Trench technology optimizes the electrical performance of the device, providing faster switching speed and lower conduction loss.
Domain and module applications：
III. IPS118N10N G-VB Application Fields and Module Examples
1. **Power Management**: IPS118N10N G-VB is widely used in switching power supplies, DC-DC converters and voltage regulators. As an efficient switching element, it effectively handles high currents, reduces power losses, and improves overall system efficiency. It is particularly suitable for industrial power supplies, server power supplies and consumer electronic devices that require high current and high efficiency.
2. **Motor Drive**: In motor drive control, this MOSFET is used as an efficient switching device to control the start, acceleration and operation of the motor. It is particularly suitable for applications with high current and low loss requirements such as power tools, automation equipment, and electric vehicles.
3. **Automotive Electronics**: In automotive electronic systems, IPS118N10N G-VB is a key component of power converters for efficient battery management systems (BMS), automotive control units (ECUs), and start/stop systems, providing efficient current management and energy conversion, and improving the power utilization and reliability of the vehicle.
4. **Inverter and Photovoltaic Applications**: In solar inverters and other renewable energy systems, this device can be used as an efficient switching element to handle the power conversion requirements from DC to AC, ensuring high efficiency and reliability of the system, and is suitable for home and industrial photovoltaic systems.
The low on-resistance and high current carrying capacity of the IPS118N10N G-VB enable it to play a key role in multiple high-performance application fields, including power conversion, power management, industrial control and automotive electronics, ensuring high efficiency and stability of the system.
1. **Power Management**: IPS118N10N G-VB is widely used in switching power supplies, DC-DC converters and voltage regulators. As an efficient switching element, it effectively handles high currents, reduces power losses, and improves overall system efficiency. It is particularly suitable for industrial power supplies, server power supplies and consumer electronic devices that require high current and high efficiency.
2. **Motor Drive**: In motor drive control, this MOSFET is used as an efficient switching device to control the start, acceleration and operation of the motor. It is particularly suitable for applications with high current and low loss requirements such as power tools, automation equipment, and electric vehicles.
3. **Automotive Electronics**: In automotive electronic systems, IPS118N10N G-VB is a key component of power converters for efficient battery management systems (BMS), automotive control units (ECUs), and start/stop systems, providing efficient current management and energy conversion, and improving the power utilization and reliability of the vehicle.
4. **Inverter and Photovoltaic Applications**: In solar inverters and other renewable energy systems, this device can be used as an efficient switching element to handle the power conversion requirements from DC to AC, ensuring high efficiency and reliability of the system, and is suitable for home and industrial photovoltaic systems.
The low on-resistance and high current carrying capacity of the IPS118N10N G-VB enable it to play a key role in multiple high-performance application fields, including power conversion, power management, industrial control and automotive electronics, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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