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IPS110N12N3 G-VB Product details
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1. IPS110N12N3 G-VB Product Introduction
IPS110N12N3 G-VB is an N-channel power MOSFET in TO-251 package, manufactured based on Trench technology. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for medium and high voltage power control applications. Its on-resistance (RDS(ON)) is 12.5mΩ (at VGS=10V), and it can carry a drain current (ID) of up to 65A. This efficient current handling capability and low on-resistance make it particularly suitable for applications with high performance requirements.
IPS110N12N3 G-VB is an N-channel power MOSFET in TO-251 package, manufactured based on Trench technology. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for medium and high voltage power control applications. Its on-resistance (RDS(ON)) is 12.5mΩ (at VGS=10V), and it can carry a drain current (ID) of up to 65A. This efficient current handling capability and low on-resistance make it particularly suitable for applications with high performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. IPS110N12N3 G-VB Detailed parameter description
- **Package type**: TO-251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Power consumption**: Depends on the thermal management in the application
- **Operating temperature range**: The specific operating temperature depends on the application scenario
- **Technology**: Trench
- **Package type**: TO-251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Power consumption**: Depends on the thermal management in the application
- **Operating temperature range**: The specific operating temperature depends on the application scenario
- **Technology**: Trench
Domain and module applications：
III. IPS110N12N3 G-VB Applications and Modules
1. **Motor Drive Module**: IPS110N12N3 G-VB is suitable for the power switch part of the motor drive, especially when it is necessary to handle medium and high voltages and provide efficient current control. The low on-resistance and high current carrying capacity of this MOSFET can improve the efficiency of the motor drive module and reduce heat.
2. **DC-DC Converter**: In DC-DC voltage conversion applications, IPS110N12N3 G-VB can provide efficient power conversion, especially suitable for medium and high power DC-DC converter design. The low on-resistance of this device can effectively reduce the power consumption during the conversion process and improve the overall efficiency of the system.
3. **Battery Management System**: This MOSFET is suitable for battery management systems (BMS), especially when handling high current charging and discharging. Its high current handling capability and low on-resistance help reduce energy consumption and ensure system stability, and is suitable for battery management in applications such as electric vehicles and power tools.
4. **Power Management Module**: IPS110N12N3 G-VB can also be used in various power management modules, especially in scenarios that need to handle voltages within 100V. This MOSFET provides efficient current control and switching performance in power distribution, voltage regulators, and other high-power management circuits.
1. **Motor Drive Module**: IPS110N12N3 G-VB is suitable for the power switch part of the motor drive, especially when it is necessary to handle medium and high voltages and provide efficient current control. The low on-resistance and high current carrying capacity of this MOSFET can improve the efficiency of the motor drive module and reduce heat.
2. **DC-DC Converter**: In DC-DC voltage conversion applications, IPS110N12N3 G-VB can provide efficient power conversion, especially suitable for medium and high power DC-DC converter design. The low on-resistance of this device can effectively reduce the power consumption during the conversion process and improve the overall efficiency of the system.
3. **Battery Management System**: This MOSFET is suitable for battery management systems (BMS), especially when handling high current charging and discharging. Its high current handling capability and low on-resistance help reduce energy consumption and ensure system stability, and is suitable for battery management in applications such as electric vehicles and power tools.
4. **Power Management Module**: IPS110N12N3 G-VB can also be used in various power management modules, especially in scenarios that need to handle voltages within 100V. This MOSFET provides efficient current control and switching performance in power distribution, voltage regulators, and other high-power management circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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