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IPS075N03L G-VB Product details
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1. Product Introduction:
IPS075N03L G-VB is a single N-channel MOSFET with TO251 package and advanced Trench technology, suitable for applications of efficient energy transmission and switch control. Its drain-source voltage VDS is 30V, which is suitable for low-voltage application scenarios. The on-resistance is as low as 7mΩ @ VGS = 10V and 9mΩ @ VGS = 4.5V, which can effectively reduce energy loss and heat generation during high current transmission. The maximum drain current ID of this MOSFET is 50A, which can support high current transmission and power applications. The allowable range of its gate-source voltage VGS is ±20V, with a wide operating range, ensuring stable performance under a variety of working conditions.
IPS075N03L G-VB is a single N-channel MOSFET with TO251 package and advanced Trench technology, suitable for applications of efficient energy transmission and switch control. Its drain-source voltage VDS is 30V, which is suitable for low-voltage application scenarios. The on-resistance is as low as 7mΩ @ VGS = 10V and 9mΩ @ VGS = 4.5V, which can effectively reduce energy loss and heat generation during high current transmission. The maximum drain current ID of this MOSFET is 50A, which can support high current transmission and power applications. The allowable range of its gate-source voltage VGS is ±20V, with a wide operating range, ensuring stable performance under a variety of working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description:
1. **Package type**: TO251
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 30V
4. **VGS (gate-source voltage)**: ±20V
5. **Vth (threshold voltage)**: 1.7V
6. **RDS(ON) (on-resistance)**:
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
7. **ID (drain current)**: 50A
8. **Qg (total gate charge)**: 35nC
9. **tr (rise time)**: 12ns
10. **tf (fall time)**: 8ns
11. **Thermal resistance (junction to case)**: 1.2°C/W
12. **Operating temperature range**: -55°C to 150°C
13. **Technology**: Trench technology
1. **Package type**: TO251
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 30V
4. **VGS (gate-source voltage)**: ±20V
5. **Vth (threshold voltage)**: 1.7V
6. **RDS(ON) (on-resistance)**:
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
7. **ID (drain current)**: 50A
8. **Qg (total gate charge)**: 35nC
9. **tr (rise time)**: 12ns
10. **tf (fall time)**: 8ns
11. **Thermal resistance (junction to case)**: 1.2°C/W
12. **Operating temperature range**: -55°C to 150°C
13. **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples:
1. **DC-DC Converter**: IPS075N03L G-VB can be used in DC-DC converters, especially as a switching element in buck converters. Its low on-resistance and high current capability can reduce power loss and improve conversion efficiency.
2. **Motor Control**: In motor control applications that require high current transmission, such as power tools and small electric vehicles, this MOSFET can provide efficient current handling and switching functions to reduce system power consumption and heat generation.
3. **Load Switch**: IPS075N03L G-VB performs well in load switch applications and is suitable for low-voltage and high-current load control, such as battery management and power modules. Its high current capability ensures fast response and effective control of the load.
4. **Power Management Modules**: The low on-resistance of this MOSFET makes it suitable for efficient power regulation in power management modules. It can be used as a switching element in low-voltage power supply systems to reduce energy loss and improve overall system efficiency.
5. **High-efficiency switching power supply (SMPS)**: IPS075N03L G-VB can also be used in switching mode power supplies (SMPS), especially in low-voltage, high-current applications. Its high efficiency and fast switching characteristics are suitable for the design of high-efficiency power supplies.
These features make this MOSFET widely used in high-current applications such as power conversion, motor drive, power management, etc. that require high efficiency and high reliability.
1. **DC-DC Converter**: IPS075N03L G-VB can be used in DC-DC converters, especially as a switching element in buck converters. Its low on-resistance and high current capability can reduce power loss and improve conversion efficiency.
2. **Motor Control**: In motor control applications that require high current transmission, such as power tools and small electric vehicles, this MOSFET can provide efficient current handling and switching functions to reduce system power consumption and heat generation.
3. **Load Switch**: IPS075N03L G-VB performs well in load switch applications and is suitable for low-voltage and high-current load control, such as battery management and power modules. Its high current capability ensures fast response and effective control of the load.
4. **Power Management Modules**: The low on-resistance of this MOSFET makes it suitable for efficient power regulation in power management modules. It can be used as a switching element in low-voltage power supply systems to reduce energy loss and improve overall system efficiency.
5. **High-efficiency switching power supply (SMPS)**: IPS075N03L G-VB can also be used in switching mode power supplies (SMPS), especially in low-voltage, high-current applications. Its high efficiency and fast switching characteristics are suitable for the design of high-efficiency power supplies.
These features make this MOSFET widely used in high-current applications such as power conversion, motor drive, power management, etc. that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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