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IPS05N03LBG-VB Product details
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1. IPS05N03LBG-VB Product Introduction
IPS05N03LBG-VB is a high-performance single-channel N-type MOSFET in TO252 package, designed for high-efficiency low-voltage, high-current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, supporting high-current switching operations. The device has a turn-on voltage (Vth) of 1.7V, and an on-resistance (RDS(ON)) of 3mΩ at VGS of 4.5V and 2mΩ at VGS of 10V, providing extremely low conduction losses, making it particularly suitable for use in high-current applications. The maximum drain current (ID) is 100A, and the use of Trench technology ensures excellent switching performance and low thermal resistance, making it suitable for a variety of high-power density applications.
IPS05N03LBG-VB is a high-performance single-channel N-type MOSFET in TO252 package, designed for high-efficiency low-voltage, high-current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, supporting high-current switching operations. The device has a turn-on voltage (Vth) of 1.7V, and an on-resistance (RDS(ON)) of 3mΩ at VGS of 4.5V and 2mΩ at VGS of 10V, providing extremely low conduction losses, making it particularly suitable for use in high-current applications. The maximum drain current (ID) is 100A, and the use of Trench technology ensures excellent switching performance and low thermal resistance, making it suitable for a variety of high-power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. IPS05N03LBG-VB Detailed parameter description
1. **Package type**: TO252
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical value 1.5°C/W (Crust)
11. **Power dissipation**: Typical value 80W
12. **Package size**: TO252 package suitable for surface mount technology (SMT)
1. **Package type**: TO252
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical value 1.5°C/W (Crust)
11. **Power dissipation**: Typical value 80W
12. **Package size**: TO252 package suitable for surface mount technology (SMT)
Domain and module applications：
III. Applications and Module Examples
1. **Automotive Electronic Systems**: IPS05N03LBG-VB is particularly suitable for high-efficiency power converters and battery management systems in automotive applications. Its low on-resistance and high current handling capability make it an excellent performer in low-voltage, high-current automotive power management modules, reducing power consumption and improving system efficiency.
2. **Power Tools**: Due to its ability to handle high currents and low switching losses, this MOSFET is ideal for the drive circuit of power tools. Its low on-resistance helps improve the energy efficiency of the tool, extend battery life, and reduce heat generation.
3. **Consumer Electronics**: In the power management systems of consumer electronic devices such as mobile phones and tablets, the high performance and low power consumption of IPS05N03LBG-VB help improve the efficiency of chargers and power converters, while its small TO252 package helps save space.
4. **Data Center and Server Power**: IPS05N03LBG-VB can be used in DC-DC converters in servers and data centers. Its high current capability and low conduction loss make it an ideal choice for high power density, high-efficiency power management systems.
5. **Photovoltaic Inverter**: In the inverter module of the photovoltaic system, this MOSFET is suitable for low voltage, high current applications, which can significantly improve the energy efficiency of the system and reduce conversion losses.
In short, IPS05N03LBG-VB is widely used in automotive electronics, power tools, consumer electronics, data center power management, and photovoltaic inverters with its low voltage, high current capability and low on-resistance. Its trench technology and high efficiency ensure excellent performance in scenarios with high power density and high efficiency requirements.
1. **Automotive Electronic Systems**: IPS05N03LBG-VB is particularly suitable for high-efficiency power converters and battery management systems in automotive applications. Its low on-resistance and high current handling capability make it an excellent performer in low-voltage, high-current automotive power management modules, reducing power consumption and improving system efficiency.
2. **Power Tools**: Due to its ability to handle high currents and low switching losses, this MOSFET is ideal for the drive circuit of power tools. Its low on-resistance helps improve the energy efficiency of the tool, extend battery life, and reduce heat generation.
3. **Consumer Electronics**: In the power management systems of consumer electronic devices such as mobile phones and tablets, the high performance and low power consumption of IPS05N03LBG-VB help improve the efficiency of chargers and power converters, while its small TO252 package helps save space.
4. **Data Center and Server Power**: IPS05N03LBG-VB can be used in DC-DC converters in servers and data centers. Its high current capability and low conduction loss make it an ideal choice for high power density, high-efficiency power management systems.
5. **Photovoltaic Inverter**: In the inverter module of the photovoltaic system, this MOSFET is suitable for low voltage, high current applications, which can significantly improve the energy efficiency of the system and reduce conversion losses.
In short, IPS05N03LBG-VB is widely used in automotive electronics, power tools, consumer electronics, data center power management, and photovoltaic inverters with its low voltage, high current capability and low on-resistance. Its trench technology and high efficiency ensure excellent performance in scenarios with high power density and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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