Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
II. Detailed parameter description of IPP80P04P4L-04-VB
1. **Package type**: TO220
2. **Configuration**: Single channel P-type MOSFET
3. **Drain-source voltage (VDS)**: -40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: -3V
6. **On-resistance (RDS(ON))**:
- 4.8mΩ @ VGS = 4.5V
- 4mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: -110A
8. **Technology type**: Trench technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical 1.1°C/W (junction to case)
11. **Power dissipation**: Typical 100W
12. **Package size**: TO220 form factor, suitable for through-hole soldering or heat sink mounting
Domain and module applications：
III. Application fields and module examples
1. **High-efficiency switching power supply (SMPS)**: The IPP80P04P4L-04-VB excels in high-efficiency switching power supplies, especially in the low-voltage section where high current is required. Its low on-resistance and high current capability help improve the overall efficiency of the power supply, reduce power consumption, and optimize system performance.
2. **Electric vehicle (EV) inverter**: In the inverter of electric vehicles, this MOSFET is suitable for high-current battery management and current switch control. Its low on-resistance helps reduce energy losses and improve the overall efficiency and reliability of the system.
3. **Current protection circuit**: Due to its ability to handle high currents and low conduction losses, the IPP80P04P4L-04-VB is suitable for current protection circuits, which can effectively provide overcurrent protection while reducing heat loss in current flow.
4. **DC-DC converter**: In a DC-DC converter, this MOSFET can be used as a high-current switching element. Its low on-resistance helps improve the efficiency of the converter, especially in low-voltage, high-current applications, which can effectively improve the conversion efficiency.
5. **Power amplifier**: In power amplifiers and other high-power applications, the IPP80P04P4L-04-VB provides the necessary high current capability and low conduction loss to ensure the stability and high efficiency of the amplifier.
In short, the IPP80P04P4L-04-VB, with its low voltage, high current capability and low on-resistance, is suitable for applications that require high efficiency and low power consumption, such as high-efficiency switching power supplies, electric vehicle inverters, current protection circuits, DC-DC converters, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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