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IPP60R250CP-VB Product details

Product introduction:

1. IPP60R250CP-VB Product Introduction

IPP60R250CP-VB is a high-performance single-channel N-type power MOSFET in TO-220 package, designed for power management applications requiring high efficiency and reliability. With a withstand voltage of 650V and a continuous drain current of 20A, the device is suitable for various high-voltage and high-current power conversion scenarios. With its low on-resistance (R_DS(ON)=160mΩ @ V_GS=10V) and high gate withstand voltage (V_GS=30V), IPP60R250CP-VB excels in switching speed and thermal management, ensuring that the system still operates stably under high load. Using advanced SJ_Multi-EPI process technology, this model has reached industry-leading levels in electrical performance and reliability, and is an ideal choice for power modules, industrial control, and automotive electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. IPP60R250CP-VB Detailed parameter description

- **Model**: IPP60R250CP-VB
- **Package type**: TO-220
- **Configuration**: Single channel N-type
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: 30V (±V)
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160 mΩ @ V_GS=10V
- **Drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI

**Parameter details**:

1. **Package type (TO-220)**: The standard TO-220 package is easy to dissipate heat and install, and is suitable for application environments that require effective thermal management.
2. **Single channel N-type**: The single channel design is suitable for a variety of switching circuits and provides efficient current control.
3. **Drain-source voltage (V_DS = 650V)**: High withstand voltage design, able to work stably in high voltage environment, suitable for high voltage power conversion.
4. **Gate-source voltage (V_GS = 30V)**: High gate withstand voltage ensures safety and reliability under different working conditions.
5. **Threshold voltage (V_th = 3.5V)**: Moderate threshold voltage ensures good switching performance of the device under logic level control.
6. **On-resistance (R_DS(ON) = 160 mΩ @ V_GS=10V)**: Low on-resistance reduces power loss and improves overall efficiency, suitable for circuits with high efficiency requirements.
7. **Drain current (I_D = 20A)**: High current carrying capacity meets the needs of high current applications and ensures stable system operation.
8. **Technology (SJ_Multi-EPI)**: Advanced multi-epitaxial process improves the electrical and thermal performance of the device, and improves the overall reliability and life.

Domain and module applications:

III. Application fields and module examples of IPP60R250CP-VB

IPP60R250CP-VB is widely used in many fields and modules due to its excellent electrical performance and high reliability. For example:

1. **Power module**: In high-efficiency power converters, IPP60R250CP-VB can be used as a switching element to improve conversion efficiency and reduce heat loss, suitable for server power supply and industrial power supply systems.
2. **Industrial control**: In industrial automation equipment, as a key component of motor drive, it ensures stable control and fast response under high current, and improves the performance and reliability of the overall system.
3. **Automotive electronics**: In the power management system of electric vehicles, IPP60R250CP-VB can handle high voltage and high current requirements, ensuring the efficient operation and safety of the vehicle power system.
4. **Renewable energy system**: In solar inverters and wind power generation systems, it is used as a key switching element to improve energy conversion efficiency and optimize system performance.
5. **Communication equipment**: In high-power communication base stations, as the core device for power management and signal processing, it ensures stable operation and high efficiency of the equipment.

Through its application in these key areas and modules, IPP60R250CP-VB demonstrates its superior performance and wide applicability in high-voltage and high-current environments, making it an ideal choice for many high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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