Product introduction：
1. Product Introduction:
IPP60R190P6-VB is a high-voltage N-channel MOSFET based on super junction (SJ) technology, packaged in TO220, with excellent switching performance and high-efficiency energy conversion capabilities. The VDS rating of this product is 650V, with high voltage resistance characteristics, suitable for high voltage applications. Its on-resistance RDS(ON) is 160mΩ (at VGS = 10V), ensuring low power consumption under high current conditions. The gate-source voltage VGS of IPP60R190P6-VB allows a range of ±30V, ensuring reliability under a variety of control voltages, and is suitable for various applications requiring high-efficiency energy conversion.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description:
1. **Package type**: TO220
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 650V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.5V
6. **RDS(ON) (on-resistance)**: 160mΩ @ VGS = 10V
7. **ID (drain current)**: 20A
8. **Technology**: Superjunction (SJ) Multi-epitaxy technology (Multi-EPI)
9. **Thermal resistance**: Rth(jc) = 1.0°C/W
10. **Qg (total gate charge)**: 49 nC
11. **td(on) (turn-on delay time)**: 10 ns
12. **tr (rise time)**: 30 ns
13. **td(off) (turn-off delay time)**: 20 ns
14. **tf (fall time)**: 15 ns
15. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Applicable fields and module examples:
1. **Power supply module**: IPP60R190P6-VB is widely used in switching power supplies (SMPS), especially in server power supplies, PC power supplies and industrial power modules. These fields require efficient energy conversion capabilities and fast switching speeds. The application of super junction technology ensures that the product has low loss and high efficiency under high voltage environments.
2. **Photovoltaic inverter**: This MOSFET can effectively improve the inverter efficiency of photovoltaic power generation systems, especially for the high-voltage part of photovoltaic inverters, ensuring efficient conversion of energy from DC to AC, reducing system energy loss and improving overall reliability.
3. **Uninterruptible power supply (UPS)**: IPP60R190P6-VB can provide stable current management and energy conversion in UPS systems, especially in medium and high power applications. It is suitable for modules that require high voltage processing to ensure continuous supply of stable energy during power outages.
4. **Industrial Motor Drive**: For high-voltage industrial motor drive control systems, the IPP60R190P6-VB can be used as a core switching element, providing excellent power handling capabilities and efficient thermal management to ensure stability and reliability during long-term operation.
The device can also be used in a variety of power modules that require high voltage processing, including lighting systems, electric vehicle charging modules, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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