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IPP180N10N3 G-VB Product details

Product introduction:

1. IPP180N10N3 G-VB Product Introduction
IPP180N10N3 G-VB is a high-performance single N-channel MOSFET in TO220 package, designed for high current and high voltage applications. The device has a drain-source voltage of 100V and can withstand a drain current of up to 70A. Its low on-resistance is 17mΩ (at VGS = 10V) and is manufactured using advanced Trench technology to ensure efficient switching performance and low power loss. Its threshold voltage is 1.8V, providing a lower turn-on voltage, allowing it to effectively conduct at a lower gate voltage.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 70A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of IPP180N10N3 G-VB
- **Package type**: TO220
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 17mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Maximum power dissipation (Ptot)**: 150W
- **Operating temperature range**: -55°C to +175°C

Domain and module applications:

3. Application fields and module examples

1. **Power management and conversion**
IPP180N10N3 G-VB is very suitable for power management and conversion systems such as switching power supplies (SMPS) and DC-DC converters due to its low on-resistance and high current capability. This MOSFET can provide efficient switching performance and reduce power loss in high-power applications, improving the energy conversion efficiency of the overall system.

2. **Motor drive and control**
In motor drive applications, especially in high-current DC motors or stepper motor drivers, IPP180N10N3 G-VB provides reliable current control and low heat loss. Its high current carrying capacity and low on-resistance make it suitable for motor drive systems in industrial automation, power tools and transportation.

3. **Automotive Electronics**
In automotive electronic systems, such as battery management systems, inverters, and electric power steering systems, the high current handling capability and low power loss of the IPP180N10N3 G-VB enable it to effectively support the stable operation of automotive electronic devices and improve the overall efficiency and reliability of the system.

4. **Solar Inverters**
In solar inverters for photovoltaic systems, the IPP180N10N3 G-VB is able to handle high currents and optimize energy conversion. Its low on-resistance helps improve the efficiency of the inverter, ensuring that the solar system can more effectively convert light energy into electrical energy.

5. **Uninterruptible Power Supply (UPS)**
In UPS systems, this MOSFET provides stable current handling capability and low on-resistance, ensuring that the system can quickly switch and provide reliable power support when the power is interrupted, thereby improving the performance and stability of the UPS.

The excellent performance of the IPP180N10N3 G-VB enables it to excel in multiple high-power and high-efficiency applications, becoming a key component in various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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