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IPP110N20N3 G-VB Product details

Product introduction:

1. Product Introduction

IPP110N20N3 G-VB is a high-voltage, high-current carrying capacity single N-channel MOSFET in TO220 package. Its maximum drain-source voltage is up to 200V, making it suitable for applications that require high voltage control. The threshold voltage of this MOSFET is 4V, and the on-resistance is 7.6mΩ at VGS=10V, ensuring low power consumption and high efficiency under high current conditions. Its rated drain current is up to 100A, which can meet the needs of various applications requiring high current handling. IPP110N20N3 G-VB uses advanced trench technology (Trench) and has excellent switching performance and thermal management capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 4V 100A 7.6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**:
- 7.6mΩ when VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench MOSFET
- **Operating temperature range**: -55°C to +175°C
- **Package pin configuration**: 3-pin (Drain, Gate, Source)

Domain and module applications:

3. Application fields and module examples

1. **High-power switching power supply (SMPS)**: The IPP110N20N3 G-VB is very suitable for use in high-power switching power supplies. Its high voltage tolerance and low on-resistance enable it to efficiently handle large currents while reducing switching losses, thereby improving the overall efficiency and reliability of the power supply.

2. **Electric vehicle (EV) power management**: In the power management system of electric vehicles, this MOSFET is able to handle high voltage and high current requirements, making it very suitable for use in battery management systems and electric drive systems, effectively controlling the flow of current and improving the stability of the system.

3. **Industrial motor drive**: The IPP110N20N3 G-VB can be applied to a variety of industrial motor drive systems, such as high-power motor control and drives. Its high current handling capability and low on-resistance ensure the efficiency and durability of motor operation, especially under heavy load or high voltage environments.

4. **Inverter**: In solar inverters or other inverter systems, the high voltage and current capabilities of the IPP110N20N3 G-VB are ideal for handling the high power loads required during the conversion process, effectively converting and regulating electrical energy and improving the overall performance of the system.

5. **UPS (Uninterruptible Power Supply) System**: This MOSFET is also suitable for UPS systems, where its high rated current and low on-resistance help provide stable power protection, ensuring that the system can respond quickly and provide stable power supply when power is interrupted.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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