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IPP100N10S3-05-VB Product details

Product introduction:

1. IPP100N10S3-05-VB Product Introduction

IPP100N10S3-05-VB is a high-performance N-channel MOSFET in TO220 package, designed for applications requiring high current carrying capacity and low on-resistance. The maximum drain-source voltage of this MOSFET is 100V, the maximum drain current is 120A, and its on-resistance is only 5mΩ at VGS = 10V. This MOSFET adopts advanced trench technology, has excellent switching performance and low power consumption characteristics, can work stably under high load conditions, and is an ideal choice for various high-power electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. IPP100N10S3-05-VB Detailed parameter description

- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Power dissipation (Ptot)**: About 300W (depending on heat dissipation conditions)
- **Thermal resistance (RthJC)**: 0.5℃/W (junction to case)
- **Operating temperature range**: -55℃ to 175℃

Domain and module applications:

III. Applications and Module Examples

1. **Power Management System**: The high current carrying capacity and low on-resistance of IPP100N10S3-05-VB make it very suitable for power management systems, such as high-efficiency DC-DC converters and power switch modules. It can effectively handle high-power loads and improve the efficiency of the overall system.

2. **Automotive Power System**: In electric and hybrid vehicles, this MOSFET can be used in battery management systems, motor drives, and power conversion modules to ensure stable operation under high current conditions while reducing energy losses.

3. **Switching Power Supply (SMPS)**: The IPP100N10S3-05-VB is suitable for the main switching element of the switching power supply. Its high current capability and low on-resistance can support high power output while maintaining efficient energy conversion, improving the overall performance of the power supply.

4. **Solar Inverter**: This MOSFET can be used as an inverter module in a photovoltaic system to convert the direct current generated by solar energy into alternating current in an efficient manner. Its low on-resistance and high current carrying capacity can effectively improve the efficiency of the inverter.

5. **Uninterruptible Power Supply (UPS)**: In UPS systems, the high switching capability and low loss characteristics of IPP100N10S3-05-VB make it a key switching element, which can maintain stable power output of the system when the load changes, improving the performance and reliability of UPS.

With its excellent current handling capability and low on-resistance, this MOSFET can provide excellent performance in multiple applications with high power and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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