Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. IPP100N10S3-05-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Power dissipation (Ptot)**: About 300W (depending on heat dissipation conditions)
- **Thermal resistance (RthJC)**: 0.5℃/W (junction to case)
- **Operating temperature range**: -55℃ to 175℃
Domain and module applications:
III. Applications and Module Examples
1. **Power Management System**: The high current carrying capacity and low on-resistance of IPP100N10S3-05-VB make it very suitable for power management systems, such as high-efficiency DC-DC converters and power switch modules. It can effectively handle high-power loads and improve the efficiency of the overall system.
2. **Automotive Power System**: In electric and hybrid vehicles, this MOSFET can be used in battery management systems, motor drives, and power conversion modules to ensure stable operation under high current conditions while reducing energy losses.
3. **Switching Power Supply (SMPS)**: The IPP100N10S3-05-VB is suitable for the main switching element of the switching power supply. Its high current capability and low on-resistance can support high power output while maintaining efficient energy conversion, improving the overall performance of the power supply.
4. **Solar Inverter**: This MOSFET can be used as an inverter module in a photovoltaic system to convert the direct current generated by solar energy into alternating current in an efficient manner. Its low on-resistance and high current carrying capacity can effectively improve the efficiency of the inverter.
5. **Uninterruptible Power Supply (UPS)**: In UPS systems, the high switching capability and low loss characteristics of IPP100N10S3-05-VB make it a key switching element, which can maintain stable power output of the system when the load changes, improving the performance and reliability of UPS.
With its excellent current handling capability and low on-resistance, this MOSFET can provide excellent performance in multiple applications with high power and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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