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IPP100N08N3 G-VB Product details

Product introduction:

IPP100N08N3 G-VB MOSFET Product Introduction:
IPP100N08N3 G-VB is a high-performance single N-channel power MOSFET in TO220 package with 80V drain-source voltage (VDS) and 100A drain current (ID). This MOSFET uses Trench technology and is designed for high current and low on-resistance applications. Its on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), respectively, which can provide excellent performance at different gate-source voltages. This makes it very suitable for power management and switching applications that require high efficiency and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to +175°C
- **Gate charge (Qg)**: Typical value is 90nC, ensuring efficient and fast switching response
- **Power dissipation**: 150W

Domain and module applications:

Applicable fields and module examples:
1. **Power management system**: The low on-resistance characteristics of IPP100N08N3 G-VB make it excel in power management systems, especially in high-current power switches and DC-DC converters. Its high current handling capability and low power consumption characteristics ensure high efficiency and stability of the system, and are widely used in industrial power supplies and computer power modules.

2. **Electric Vehicles (EV)**: In the power system and battery management system of electric vehicles, the high current carrying capacity and low on-resistance characteristics of this MOSFET make it suitable for power conversion and switching applications. For example, in the charging module and battery control module of electric vehicles, it can effectively reduce energy loss and improve overall system efficiency.

3. **Switching Power Supply (SMPS)**: IPP100N08N3 G-VB can be used as the main switch or synchronous rectifier in the switching power supply. Its low RDS(ON) ensures the lowest power consumption and heat accumulation under high-frequency switching operation, which is suitable for switching power supply design applied to TVs, power adapters and other consumer electronic products.

4. **Industrial Equipment and Motor Drive**: In industrial equipment and motor drive systems, this MOSFET can handle large currents and is suitable for inverters and PWM control circuits. Its high current capability and low power consumption ensure high efficiency and reliability of motor drives, especially for high-power motors and industrial automation systems.

In short, the IPP100N08N3 G-VB MOSFET is widely used in power management, electric vehicles, switching power supplies, and industrial motor control due to its high current capability and low on-resistance, which can effectively improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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