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IPP07N03LB G-VB Product details

Product introduction:

IPP07N03LB G-VB Product Introduction

IPP07N03LB G-VB is a high-performance N-Channel MOSFET in a TO220 package manufactured using Trench technology. This MOSFET is designed to provide extremely low on-resistance and high current carrying capability, making it excellent in high-efficiency and high-power applications. Its low on-resistance and wide VGS range make it widely applicable in a variety of electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and modules

1. **Switching Power Supply (SMPS)**:
The low on-resistance and high current capability of IPP07N03LB G-VB make it very suitable for use in switching power supplies (SMPS). Its excellent electrical characteristics can significantly reduce power loss and improve efficiency, and is particularly suitable for high power density power modules and industrial power systems.

2. **Motor Driver**:
In motor driver applications, IPP07N03LB G-VB can provide stable and efficient current control. Its low RDS(ON) characteristics reduce power loss, thereby improving the efficiency of motor drive, and are suitable for motor control systems in power tools, electric vehicles, and home appliances.

3. **DC-DC Converter**:
Due to the low on-resistance and high current capability of IPP07N03LB G-VB, it is very suitable for use in DC-DC converters. This MOSFET can improve conversion efficiency and reduce energy loss, and is suitable for use in mobile devices, high-efficiency battery management systems, and high-efficiency power modules.

4. **Power Amplifier**:
In power amplifier modules, the low RDS(ON) of IPP07N03LB G-VB can effectively reduce power loss and improve the efficiency of signal amplification. It is very suitable for high-power RF amplifiers and audio amplifiers, and can provide high-efficiency and reliable signal amplification, especially in high-power and high-frequency applications.

5. **Automotive Electronics**:
IPP07N03LB G-VB can ensure stable operation of the system in harsh environments in automotive electronic systems, such as power window control and on-board battery management systems. Its high current carrying capacity and reliability make it excellent in switch control and power management applications in the field of automotive electronics.

These application examples show the wide applicability and excellent performance of IPP07N03LB G-VB in high-power, high-efficiency scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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