Featured Model

Your present location > Home page > Featured Model

IPP06CN10N G-VB Product details

Product introduction:

Product Introduction

**IPP06CN10N G-VB** is a high-performance N-channel MOSFET in a TO220 package. This MOSFET is manufactured using Trench technology to provide low on-resistance and high current carrying capability. Its design optimizes switching efficiency and power density, making it suitable for use in a variety of high-power applications, including power management systems and motor drives.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: IPP06CN10N G-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

The design of the **IPP06CN10N G-VB** makes it suitable for a variety of application scenarios, especially in areas that require efficient and reliable power management:

1. **High-efficiency power converter**: Due to its low on-resistance and high current carrying capacity, the IPP06CN10N G-VB is an ideal choice in high-efficiency DC-DC converters. In such applications, it can effectively reduce power losses, improve overall conversion efficiency, and can handle larger load currents due to its high current capability.

2. **Motor control system**: In motor drive systems, the high current handling capability and low on-resistance of the IPP06CN10N G-VB make it a key component of motor control circuits. For example, it can be used to drive electric vehicles, power tools, or other high-power motor equipment, providing stable current output and effective switching control.

3. **Power amplifier**: This MOSFET is also suitable for use in power amplifiers, especially in applications that need to handle high-power signals. Due to its excellent switching performance and low on-resistance, the IPP06CN10N G-VB can enhance the efficiency and stability of power amplifiers and is suitable for wireless communication equipment, audio amplifiers and other high-power applications.

The common point in these fields is that they all require efficient and stable switching operations, and the high-performance characteristics of the IPP06CN10N G-VB can meet these needs, thereby improving the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat