Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
110A |
|
|
6mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
110A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
110A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 40V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 7mΩ (V_GS = 4.5V)
- 6mΩ (V_GS = 10V)
- **Maximum leakage current (I_D)**: 110A
- **Technology**: Trench
Domain and module applications:
Applications and Modules
**1. Power Management**
- **Description**: In power management systems, IPP065N04N G-VB MOSFET can be used as a switching element in a DC-DC converter. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion under high load conditions, reduce power loss, and improve the overall energy efficiency of the system.
**2. Motor Drive**
- **Description**: This MOSFET performs well in motor drive circuits and is suitable for driving DC motors or stepper motors. Its high current carrying capacity and low R_DS(ON) can effectively reduce power consumption and ensure stable performance and reliability during motor startup and operation.
**3. Switching Power Supply**
- **Description**: In switching power supply design, IPP065N04N G-VB MOSFET can provide stable power output as the main switching element. Its excellent switching performance and low on-resistance help improve the efficiency of the switching power supply, reduce energy loss, and ensure stable operation of the power supply.
**4. High-frequency switching applications**
- **Description**: In high-frequency switching circuits, such as pulse width modulation (PWM) control, the low on-resistance and good switching characteristics of the IPP065N04N G-VB make it an ideal choice. These characteristics help achieve efficient switching operations at high frequencies and are suitable for a variety of high-efficiency switching applications.
With its high current carrying capacity and low on-resistance, this MOSFET can play an important role in multiple high-load, high-efficiency application fields, ensuring high efficiency and reliability of the equipment under different conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours