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IPP05CN10N G-VB Product details

Product introduction:

IPP05CN10N G-VB MOSFET Product Introduction

**IPP05CN10N G-VB** is a high-performance single N-channel MOSFET in TO220 package, designed for high voltage and high current applications. It is manufactured using Trench technology and has excellent on-resistance and low conduction loss. Its maximum drain-source voltage is 100V, the gate-source voltage is ±20V, and the drain current is up to 120A, which is very suitable for high-power switching and conversion applications. Its low RDS(on) characteristics give it extremely low conduction losses during the switching process, effectively improving the energy efficiency and reliability of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(on))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology

Domain and module applications:

Applications and module examples

1. **Switching power supply**: Due to its low on-resistance and high current carrying capacity, the IPP05CN10N G-VB is particularly suitable for high-efficiency switching power supply designs. In such applications, it can be used as the main switching element to minimize power losses and improve energy efficiency.

2. **DC-DC converter**: In a DC-DC converter, the IPP05CN10N G-VB can be used as a synchronous rectifier. Its low RDS(on) characteristics help reduce power losses during the conversion process, thereby improving overall system efficiency and stability.

3. **Motor drive**: In motor drive applications, the high current handling capability of this MOSFET enables it to reliably handle the starting and running currents of the motor. It can effectively control the power output of the motor and improve the reliability of the system.

4. **High-power LED drive**: For applications that need to drive high-power LEDs, the IPP05CN10N G-VB is able to provide a stable current supply and reduce power losses. This is critical to the performance and life of LED lighting systems.

5. **Power Management**: In various power management modules, this MOSFET can be used as a switching element or protection element to help manage the switching and regulation of power to ensure safe and efficient operation of the system.

These application areas and module examples demonstrate the wide applicability and high-performance characteristics of the IPP05CN10N G-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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