Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
IPP03N03LB G-VB Detailed parameter description
1. **Package type**: TO220
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
7. **Drain current (ID)**: 120A
8. **Maximum pulse current (ID, pulse)**: 300A
9. **Power dissipation (Ptot)**: 150W
10. **Technology type**: Trench
11. **Input capacitance (Ciss)**: Approx. 2500pF
12. **Gate charge (Qg)**: Typical 70nC
13. **Reverse recovery time (Trr)**: Typical 20ns
14. **Operating temperature range**: -55°C to 175°C
15. **Maximum junction temperature (Tj)**: 175°C
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**:
The IPP03N03LB G-VB is suitable for high-efficiency power management systems such as DC-DC converters and power switches. Its low on-resistance and high current carrying capacity enable it to reduce energy loss and improve system efficiency in these applications, making it suitable for high-efficiency power modules and high-load applications.
2. **Electric vehicle (EV) power control**:
In electric vehicles, this MOSFET can be used for motor drives and battery management systems. Its high current capability and low on-resistance help improve the efficiency of the electric vehicle's power system, ensure stable current control and reduce energy loss, thereby enhancing the overall performance and endurance of the electric vehicle.
3. **Industrial automation systems**:
In industrial automation systems, the IPI03N03LB G-VB is suitable for motor drives and control modules. Its excellent switching performance and high current handling capability make its switching operations in industrial equipment more efficient and reliable, especially in drive systems that need to handle high currents.
4. **Power Switch and Protection Circuit**:
This MOSFET can also be used in power switch and overcurrent protection circuits. For example, in switch mode power supplies (SMPS) and power protection modules, the low on-resistance and high current handling capability of the IP03N03LB G-VB ensure stable power switch performance and effectively protect the circuit from overcurrent damage.
The IPP03N03LB G-VB is widely used in power management, electric vehicles, power control, industrial automation and other high-performance applications due to its high current capability, low on-resistance and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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