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IPP023N10N5-VB Product details

Product introduction:

IPP023N10N5-VB MOSFET Product Introduction

IPP023N10N5-VB is a high-performance N-channel MOSFET in TO220 package, designed for high voltage and high current applications. The MOSFET supports a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) of ±20V, with a turn-on voltage (Vth) of 3V. Its on-resistance is 5mΩ at VGS=10V, and it can handle drain currents up to 120A. The use of advanced Trench technology gives the MOSFET superior performance and high efficiency in high current and high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology

Domain and module applications:

Application fields and module examples

1. **High-power power converter**: IPP023N10N5-VB is very suitable in high-power power converters, such as switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability help reduce power loss and improve conversion efficiency, especially in high power density applications.

2. **Electric vehicle drive system**: In electric vehicle motor drive systems, this MOSFET can effectively handle high current demands. Its low on-resistance and high current carrying capacity help improve the driving efficiency of the motor, reduce power consumption and heat, and is suitable for the power system and drive control module of electric vehicles.

3. **High-power load switch**: Due to its high current carrying capacity and low on-resistance, IPP023N10N5-VB is an ideal choice for high-power load switches. It can work stably under high current loads, suitable for high-power switching power supplies and load control applications, ensuring the stability and reliability of switching performance.

4. **Industrial Power Management System**: In industrial power management systems, this MOSFET provides efficient current switching. It is suitable for power management applications that require high current handling and low power consumption, such as power modules and protection circuits for industrial equipment, helping to improve the overall efficiency and reliability of the system.

The low on-resistance and high current handling capability of the IPP023N10N5-VB make it excellent in high-power power conversion, electric vehicle drives, high-power load switches, and industrial power management systems, and is particularly suitable for applications that require high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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