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IPI80N04S4-04-VB Product details
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Product Introduction:
IPI80N04S4-04-VB is a high-performance single N-channel MOSFET with TO262 package type, designed for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, supports a gate-source voltage (VGS) of ±20V, and has a turn-on threshold voltage of 2V. IPI80N04S4-04-VB uses Trench technology, has a low on-resistance, 5.7mΩ (@VGS=10V), and can handle drain currents up to 75A. This makes it ideal for use in high-current, high-efficiency power management and load switching applications.
IPI80N04S4-04-VB is a high-performance single N-channel MOSFET with TO262 package type, designed for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, supports a gate-source voltage (VGS) of ±20V, and has a turn-on threshold voltage of 2V. IPI80N04S4-04-VB uses Trench technology, has a low on-resistance, 5.7mΩ (@VGS=10V), and can handle drain currents up to 75A. This makes it ideal for use in high-current, high-efficiency power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **Power converter**: IPI80N04S4-04-VB performs well in power converters, especially high-efficiency DC-DC converters and AC-DC converters. Low on-resistance helps reduce power consumption and heat, improve power conversion efficiency, and is suitable for power modules of various electronic devices.
2. **Motor drive**: In electric vehicles and industrial motor drive systems, this MOSFET can effectively handle large currents and provide stable and reliable motor control. Low on-resistance reduces power consumption in motor drives, improving system efficiency and performance.
3. **Switching power supply module**: IPI80N04S4-04-VB is suitable for switching power supply modules, including computer power supplies and chargers. Its low on-resistance and high current handling capability enable it to provide efficient switching operation, improving the performance and reliability of power modules.
4. **Load Switch**: In high-power load switch applications, such as power management systems and high-power load control, IPI80N04S4-04-VB can provide efficient switch control, reduce power consumption and ensure load stability.
5. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems (BMS) and electric power steering systems, this MOSFET can handle high current demands, support efficient power management and stable current control, and improve the overall performance and reliability of automotive electronic systems.
1. **Power converter**: IPI80N04S4-04-VB performs well in power converters, especially high-efficiency DC-DC converters and AC-DC converters. Low on-resistance helps reduce power consumption and heat, improve power conversion efficiency, and is suitable for power modules of various electronic devices.
2. **Motor drive**: In electric vehicles and industrial motor drive systems, this MOSFET can effectively handle large currents and provide stable and reliable motor control. Low on-resistance reduces power consumption in motor drives, improving system efficiency and performance.
3. **Switching power supply module**: IPI80N04S4-04-VB is suitable for switching power supply modules, including computer power supplies and chargers. Its low on-resistance and high current handling capability enable it to provide efficient switching operation, improving the performance and reliability of power modules.
4. **Load Switch**: In high-power load switch applications, such as power management systems and high-power load control, IPI80N04S4-04-VB can provide efficient switch control, reduce power consumption and ensure load stability.
5. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems (BMS) and electric power steering systems, this MOSFET can handle high current demands, support efficient power management and stable current control, and improve the overall performance and reliability of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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