IPI80N04S4-03-VB Product details
Product introduction:
IPI80N04S4-03-VB is a high-performance N-channel power MOSFET in TO262 package. The device supports a drain-source voltage (VDS) of up to 60V and a drain current (ID) of 75A, and uses advanced Trench technology to achieve a very low on-resistance of only 5.7mΩ (at VGS=10V). Its gate threshold voltage (Vth) is 2V, which is suitable for low gate drive voltage applications. The high current handling capability and low power consumption of IPI80N04S4-03-VB make it very suitable for a variety of application scenarios such as power management, motor control and high-efficiency load switching.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package type**: TO262
- **Configuration**: Single channel N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
- **Power consumption**: The specific power consumption depends on the heat dissipation conditions in the application
- **Switching speed**: Fast switching performance, suitable for high frequency applications
Domain and module applications:
1. **High-efficiency DC-DC converter**
The low on-resistance and high current handling capability of IPI80N04S4-03-VB make it very suitable for high-efficiency DC-DC converters. In data center power supplies, communication equipment, and computer power modules, it can significantly improve energy efficiency and reduce power consumption, ensuring efficient and stable operation of the power supply.
2. **Motor drive system**
In motor drive applications, this MOSFET can be used as a power switch to control the start, stop, and operation of the motor. Its high current handling capability and low on-resistance provide reliable performance in motor control systems for electric vehicles, power tools, and industrial automation equipment.
3. **Power switch and load control**
IPI80N04S4-03-VB can be used as a high-efficiency power switch and load control device, especially suitable for switching control of high-power loads. Its low on-resistance ensures lower power consumption and efficient load control, and is widely used in consumer electronics, battery management systems, and power protection circuits.
4. **Automotive Electronic Systems**
In automotive electronic applications, IPI80N04S4-03-VB can be used for power management and load switching, meeting the requirements of automotive power modules and drive control systems for high efficiency and reliability. It is suitable for automotive electronic control units (ECUs), drive systems of electric vehicles, and power protection circuits.
The excellent performance and high efficiency of IPI80N04S4-03-VB make it an ideal choice for a variety of high current and low power applications, providing a stable switch control solution.
Technical support:
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