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IPI80N04S3-06-VB Product details
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Product Introduction
IPI80N04S3-06-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 60V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 2V. The on-resistance of this MOSFET is only 5.7mΩ at VGS=10V, and it can support a drain current (ID) of up to 75A. It is based on advanced Trench technology, providing extremely low on-resistance and excellent current handling capability, and is very suitable for high-efficiency and high-power switching applications.
IPI80N04S3-06-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 60V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 2V. The on-resistance of this MOSFET is only 5.7mΩ at VGS=10V, and it can support a drain current (ID) of up to 75A. It is based on advanced Trench technology, providing extremely low on-resistance and excellent current handling capability, and is very suitable for high-efficiency and high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
7. **Drain current (ID)**: 75A
8. **Technology**: Trench technology
9. **Total gate charge (Qg)**: Moderate, suitable for fast switching
10. **Power dissipation (Ptot)**: Good performance in high-power applications
11. **Operating temperature range**: -55°C to 175°C
12. **Junction temperature (Tj)**: Can withstand high temperature operation
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
7. **Drain current (ID)**: 75A
8. **Technology**: Trench technology
9. **Total gate charge (Qg)**: Moderate, suitable for fast switching
10. **Power dissipation (Ptot)**: Good performance in high-power applications
11. **Operating temperature range**: -55°C to 175°C
12. **Junction temperature (Tj)**: Can withstand high temperature operation
Domain and module applications：
Applicable fields and modules
1. **High-efficiency switching power supply**: The low on-resistance and high current handling capability of IPI80N04S3-06-VB make it very suitable for use in switching power supplies (such as DC-DC converters). It can significantly reduce power loss and improve power conversion efficiency, making it an ideal choice for high-efficiency power supply design.
2. **Electric vehicles and battery management systems**: In the drive system and battery management system of electric vehicles, this MOSFET can handle high current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of the battery management system.
3. **Industrial control and motor drive**: IPI80N04S3-06-VB can provide stable performance and efficient switching functions in industrial control systems, including motor drives and load switches. Its high current handling capability makes it suitable for scenarios requiring high power control.
4. **Consumer Electronics**: In consumer electronics such as high-power chargers and power adapters, the low on-resistance and high current capability of this MOSFET help improve the overall energy efficiency of the device. It is suitable for electronic devices that require high efficiency and high power control.
The low on-resistance and high current handling capability of the IPI80N04S3-06-VB enable it to perform well in areas such as high-efficiency switching, electric vehicles, battery management, and industrial control, effectively improving the efficiency and reliability of the system.
1. **High-efficiency switching power supply**: The low on-resistance and high current handling capability of IPI80N04S3-06-VB make it very suitable for use in switching power supplies (such as DC-DC converters). It can significantly reduce power loss and improve power conversion efficiency, making it an ideal choice for high-efficiency power supply design.
2. **Electric vehicles and battery management systems**: In the drive system and battery management system of electric vehicles, this MOSFET can handle high current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of the battery management system.
3. **Industrial control and motor drive**: IPI80N04S3-06-VB can provide stable performance and efficient switching functions in industrial control systems, including motor drives and load switches. Its high current handling capability makes it suitable for scenarios requiring high power control.
4. **Consumer Electronics**: In consumer electronics such as high-power chargers and power adapters, the low on-resistance and high current capability of this MOSFET help improve the overall energy efficiency of the device. It is suitable for electronic devices that require high efficiency and high power control.
The low on-resistance and high current handling capability of the IPI80N04S3-06-VB enable it to perform well in areas such as high-efficiency switching, electric vehicles, battery management, and industrial control, effectively improving the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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