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IPI80N04S3-04-VB Product details
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Product Introduction:
IPI80N04S3-04-VB is a high-performance single N-channel MOSFET in TO262 package, manufactured based on advanced Trench technology. With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 75A, this MOSFET can provide excellent performance in high current applications. Its gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 2V, ensuring stable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 5.7mΩ @ VGS=10V, providing extremely low power loss and suitable for a variety of high-efficiency switching applications.
IPI80N04S3-04-VB is a high-performance single N-channel MOSFET in TO262 package, manufactured based on advanced Trench technology. With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 75A, this MOSFET can provide excellent performance in high current applications. Its gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 2V, ensuring stable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 5.7mΩ @ VGS=10V, providing extremely low power loss and suitable for a variety of high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power converter**: IPI80N04S3-04-VB is widely used in power converters, especially in DC-DC converters. Its low on-resistance and high current handling capability make it excel in high-power switching applications, improving conversion efficiency and reducing energy loss, and is suitable for power management of various electronic devices.
2. **Motor drive control**: In motor drive systems, this MOSFET can be used as a switching element in motor control modules. Its high current capability and low power consumption ensure the stability and efficiency of motor drive, and is suitable for industrial automation equipment and power tools.
3. **Battery management system (BMS)**: In battery management systems, IPI80N04S3-04-VB can be used as a battery protection switch to control the charging and discharging process. Its excellent on-resistance and high current handling capability ensure the efficient operation of the system, which can effectively extend battery life and improve the overall performance of the system.
4. **Automotive Electronic Systems**: This MOSFET is also used in automotive electronic systems, such as electric vehicle power systems and automotive lighting control. Its high current capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems, meeting the needs of modern cars for high-performance components.
With its excellent performance and high-efficiency characteristics, IPI80N04S3-04-VB is suitable for high-power switching and power conversion applications, providing reliable solutions in power management, motor control, battery management and automotive electronic systems.
1. **Power converter**: IPI80N04S3-04-VB is widely used in power converters, especially in DC-DC converters. Its low on-resistance and high current handling capability make it excel in high-power switching applications, improving conversion efficiency and reducing energy loss, and is suitable for power management of various electronic devices.
2. **Motor drive control**: In motor drive systems, this MOSFET can be used as a switching element in motor control modules. Its high current capability and low power consumption ensure the stability and efficiency of motor drive, and is suitable for industrial automation equipment and power tools.
3. **Battery management system (BMS)**: In battery management systems, IPI80N04S3-04-VB can be used as a battery protection switch to control the charging and discharging process. Its excellent on-resistance and high current handling capability ensure the efficient operation of the system, which can effectively extend battery life and improve the overall performance of the system.
4. **Automotive Electronic Systems**: This MOSFET is also used in automotive electronic systems, such as electric vehicle power systems and automotive lighting control. Its high current capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems, meeting the needs of modern cars for high-performance components.
With its excellent performance and high-efficiency characteristics, IPI80N04S3-04-VB is suitable for high-power switching and power conversion applications, providing reliable solutions in power management, motor control, battery management and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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