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IPI80N04S3-03-VB Product details
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IPI80N04S3-03-VB MOSFET Product Introduction
IPI80N04S3-03-VB is a high-performance N-channel MOSFET in a TO262 package. This MOSFET is designed for high current and high voltage applications with excellent performance characteristics. Its drain-source voltage (VDS) is up to 60V, and the gate-source voltage (VGS) supports a range of ±20V. The gate threshold voltage (Vth) is 2V, indicating that it can start to conduct at a low voltage. The on-resistance (RDS(ON)) of this MOSFET is 5.7mΩ (@ VGS = 10V), which is suitable for applications requiring low conduction losses and high current carrying capacity. IPI80N04S3-03-VB uses advanced Trench technology, has good switching performance and thermal stability, and is suitable for various power management and high power applications.
IPI80N04S3-03-VB is a high-performance N-channel MOSFET in a TO262 package. This MOSFET is designed for high current and high voltage applications with excellent performance characteristics. Its drain-source voltage (VDS) is up to 60V, and the gate-source voltage (VGS) supports a range of ±20V. The gate threshold voltage (Vth) is 2V, indicating that it can start to conduct at a low voltage. The on-resistance (RDS(ON)) of this MOSFET is 5.7mΩ (@ VGS = 10V), which is suitable for applications requiring low conduction losses and high current carrying capacity. IPI80N04S3-03-VB uses advanced Trench technology, has good switching performance and thermal stability, and is suitable for various power management and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IPI80N04S3-03-VB Detailed parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS = 10V
7. **Drain current (ID)**: 75A
8. **Maximum pulse current (ID, pulse)**: Up to 300A
9. **Power dissipation (Ptot)**: Typical value is 200W
10. **Technology type**: Trench
11. **Input capacitance (Ciss)**: Approx. 3500pF
12. **Gate charge (Qg)**: Typical value is 110nC
13. **Reverse recovery time (Trr)**: Typical value is 30ns
14. **Operating temperature range**: -55°C to 175°C
15. **Maximum junction temperature (Tj)**: 175°C
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS = 10V
7. **Drain current (ID)**: 75A
8. **Maximum pulse current (ID, pulse)**: Up to 300A
9. **Power dissipation (Ptot)**: Typical value is 200W
10. **Technology type**: Trench
11. **Input capacitance (Ciss)**: Approx. 3500pF
12. **Gate charge (Qg)**: Typical value is 110nC
13. **Reverse recovery time (Trr)**: Typical value is 30ns
14. **Operating temperature range**: -55°C to 175°C
15. **Maximum junction temperature (Tj)**: 175°C
Domain and module applications：
Applications and Module Examples
1. **Power Management Systems**:
IPI80N04S3-03-VB can be used in various power management modules such as DC-DC converters and power switches. Its low on-resistance and high current handling capability make it excellent in high-efficiency power conversion and current control, and is suitable for power systems that require high efficiency and low power consumption.
2. **Electric Vehicle (EV) Power Systems**:
In electric vehicle systems, this MOSFET can be used in battery management systems, motor drives, and power control modules. Its excellent current carrying capacity and low conduction losses help improve the efficiency and performance of electric vehicle systems, extend battery life, and reduce energy losses.
3. **Industrial Automation and Control Systems**:
IPI80N04S3-03-VB is suitable for industrial motor drive and control systems. Its high current capability and low on-resistance ensure high efficiency and stability in motor drive systems, and is suitable for various industrial applications such as mechanical control and automation equipment.
4. **High Power Switching and Protection Circuits**:
This MOSFET can be used in high power switching and power protection circuits, such as switching power supplies and overcurrent protection modules. Its high current handling capability and low on-resistance ensure reliable switching performance and effective power protection in high power applications.
IPI80N04S3-03-VB performs well in power management, electric vehicles, industrial control and high power switching applications due to its high current capability, low on-resistance and excellent switching performance.
1. **Power Management Systems**:
IPI80N04S3-03-VB can be used in various power management modules such as DC-DC converters and power switches. Its low on-resistance and high current handling capability make it excellent in high-efficiency power conversion and current control, and is suitable for power systems that require high efficiency and low power consumption.
2. **Electric Vehicle (EV) Power Systems**:
In electric vehicle systems, this MOSFET can be used in battery management systems, motor drives, and power control modules. Its excellent current carrying capacity and low conduction losses help improve the efficiency and performance of electric vehicle systems, extend battery life, and reduce energy losses.
3. **Industrial Automation and Control Systems**:
IPI80N04S3-03-VB is suitable for industrial motor drive and control systems. Its high current capability and low on-resistance ensure high efficiency and stability in motor drive systems, and is suitable for various industrial applications such as mechanical control and automation equipment.
4. **High Power Switching and Protection Circuits**:
This MOSFET can be used in high power switching and power protection circuits, such as switching power supplies and overcurrent protection modules. Its high current handling capability and low on-resistance ensure reliable switching performance and effective power protection in high power applications.
IPI80N04S3-03-VB performs well in power management, electric vehicles, industrial control and high power switching applications due to its high current capability, low on-resistance and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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