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IPI80N04S2-H4-VB Product details
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IPI80N04S2-H4-VB MOSFET Product Introduction
IPI80N04S2-H4-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and medium voltage applications. This MOSFET supports a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 2V, with an extremely low on-resistance of 5.7mΩ at VGS=10V, and can carry a drain current of up to 75A. This MOSFET uses advanced Trench technology to optimize switching performance and power consumption, and is suitable for applications requiring high performance and low power consumption.
IPI80N04S2-H4-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and medium voltage applications. This MOSFET supports a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 2V, with an extremely low on-resistance of 5.7mΩ at VGS=10V, and can carry a drain current of up to 75A. This MOSFET uses advanced Trench technology to optimize switching performance and power consumption, and is suitable for applications requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench MOSFET technology
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Application fields and module examples
1. **High-efficiency power converter**: IPI80N04S2-H4-VB performs well in DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to efficiently convert power while reducing power losses, making it suitable for power conversion applications that require high efficiency.
2. **Motor drive system**: In electric vehicles and industrial motor drive systems, this MOSFET is able to handle high current demands and provide stable motor control. Low on-resistance and high current carrying capacity help improve the overall efficiency of the motor drive system and reduce power consumption and heat.
3. **High-power load switch**: IPI80N04S2-H4-VB is suitable for high-power load switching applications. It can maintain stable performance under high current loads and reduce switching losses, and is widely used in high-power switching power supplies and load switch modules.
4. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used to control and protect battery packs, especially in electric vehicles, energy storage systems, and renewable energy systems. Its high current handling capability and low power consumption ensure efficient and reliable operation of the system.
The low on-resistance and high current handling capability of the IPI80N04S2-H4-VB enable it to perform well in power conversion, motor drive, high-power load switching, and battery management systems, and is particularly suitable for applications requiring high efficiency and high power density.
1. **High-efficiency power converter**: IPI80N04S2-H4-VB performs well in DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to efficiently convert power while reducing power losses, making it suitable for power conversion applications that require high efficiency.
2. **Motor drive system**: In electric vehicles and industrial motor drive systems, this MOSFET is able to handle high current demands and provide stable motor control. Low on-resistance and high current carrying capacity help improve the overall efficiency of the motor drive system and reduce power consumption and heat.
3. **High-power load switch**: IPI80N04S2-H4-VB is suitable for high-power load switching applications. It can maintain stable performance under high current loads and reduce switching losses, and is widely used in high-power switching power supplies and load switch modules.
4. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used to control and protect battery packs, especially in electric vehicles, energy storage systems, and renewable energy systems. Its high current handling capability and low power consumption ensure efficient and reliable operation of the system.
The low on-resistance and high current handling capability of the IPI80N04S2-H4-VB enable it to perform well in power conversion, motor drive, high-power load switching, and battery management systems, and is particularly suitable for applications requiring high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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