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IPI80N04S2-04-VB Product details
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1. IPI80N04S2-04-VB Product Introduction
IPI80N04S2-04-VB is a high-performance single N-channel MOSFET packaged in TO262. This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 100V and a drain current capability of up to 50A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2V, and the on-resistance is 20mΩ (at VGS=10V). Using Trench technology, this MOSFET provides excellent conductivity and switching speed under high current and high voltage conditions, and is suitable for high-power and high-frequency applications.
IPI80N04S2-04-VB is a high-performance single N-channel MOSFET packaged in TO262. This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 100V and a drain current capability of up to 50A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2V, and the on-resistance is 20mΩ (at VGS=10V). Using Trench technology, this MOSFET provides excellent conductivity and switching speed under high current and high voltage conditions, and is suitable for high-power and high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI80N04S2-04-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ@VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench (trench technology)
- **Features**: Low on-resistance, high current carrying capacity, good switching performance, suitable for high power applications.
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ@VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench (trench technology)
- **Features**: Low on-resistance, high current carrying capacity, good switching performance, suitable for high power applications.
Domain and module applications：
3. Application fields and module examples of IPI80N04S2-04-VB
1. **High voltage power converter**: IPI80N04S2-04-VB performs well in high voltage power converters. Its drain-source voltage up to 100V and low on-resistance enable it to effectively handle high voltage and high current in the power conversion process, improve conversion efficiency and reduce energy loss.
2. **Power management of electric vehicles**: In the power management system of electric vehicles, this MOSFET is able to handle the needs of high voltage and high current for battery management and motor drive. Its stable performance and low on-resistance can improve the overall efficiency and reliability of the system.
3. **Power supply system**: In the power supply system, IPI80N04S2-04-VB can be used for high power switching and protection circuits. Its high current carrying capacity and excellent switching performance ensure the stability and safety of the power system, and is suitable for applications requiring efficient power control.
4. **High-power LED driver**: This MOSFET is also suitable for high-power LED drivers. Its low on-resistance and high current capability help drive LED lighting systems efficiently, providing stable light output and energy efficiency while reducing heat and power consumption.
The high voltage and high current capabilities of the IPI80N04S2-04-VB enable it to perform well in multiple high-power applications, providing a reliable solution to meet the needs of power management and power conversion applications.
1. **High voltage power converter**: IPI80N04S2-04-VB performs well in high voltage power converters. Its drain-source voltage up to 100V and low on-resistance enable it to effectively handle high voltage and high current in the power conversion process, improve conversion efficiency and reduce energy loss.
2. **Power management of electric vehicles**: In the power management system of electric vehicles, this MOSFET is able to handle the needs of high voltage and high current for battery management and motor drive. Its stable performance and low on-resistance can improve the overall efficiency and reliability of the system.
3. **Power supply system**: In the power supply system, IPI80N04S2-04-VB can be used for high power switching and protection circuits. Its high current carrying capacity and excellent switching performance ensure the stability and safety of the power system, and is suitable for applications requiring efficient power control.
4. **High-power LED driver**: This MOSFET is also suitable for high-power LED drivers. Its low on-resistance and high current capability help drive LED lighting systems efficiently, providing stable light output and energy efficiency while reducing heat and power consumption.
The high voltage and high current capabilities of the IPI80N04S2-04-VB enable it to perform well in multiple high-power applications, providing a reliable solution to meet the needs of power management and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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