IPI80N03S4L-03-VB Product details
Product introduction:
IPI80N03S4L-03-VB is a high-performance single N-channel MOSFET in TO262 package, designed for applications requiring high current and high efficiency. Its main features include 30V drain-source withstand voltage and up to 98A drain current carrying capacity. MOSFET adopts Trench technology and has extremely low on-resistance (RDS(ON) is 2.4mΩ @ VGS=10V), ensuring efficient power conversion and low power consumption under high load conditions. This MOSFET is suitable for a variety of applications requiring high switching performance and high current handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 2V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 2V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 2V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package type**: TO262
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Thermal performance**: Excellent heat dissipation performance, suitable for high power density applications
Domain and module applications:
1. **High-efficiency power management system**
IPI80N03S4L-03-VB performs well in power management systems, especially in DC-DC converters and power modules. Its low on-resistance and high current carrying capacity can significantly reduce energy loss and improve the efficiency of the overall system. It is widely used in computer power supplies, communication equipment power supplies, and industrial power systems.
2. **Electric Vehicles and Battery Management**
In electric vehicles and battery management systems, IPI80N03S4L-03-VB is able to handle high-current charging and discharging tasks. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the battery management system, thereby improving the endurance and performance of electric vehicles.
3. **Power Tools and Motor Control**
This MOSFET is also very suitable in power tool and motor control applications. Its high current handling capability enables it to drive high-power motors in power tools, provide stable current output, and improve system efficiency and reliability.
4. **LED Driver**
In LED driver applications, the low on-resistance of IPI80N03S4L-03-VB can provide a stable current to ensure the brightness and performance of high-power LEDs. It is suitable for high-brightness LED lighting systems to help reduce power consumption and heat generation.
5. **Industrial Automation Equipment**
This MOSFET is suitable for a variety of industrial automation equipment, such as PLC controllers and robotic systems. Its high current capability and low power consumption characteristics help improve the reliability and efficiency of equipment, and adapt to fast response and high-load working environments.
Technical support:
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