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IPI80CN10N G-VB Product details
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Product Introduction:
IPI80CN10N G-VB is a high-performance single N-channel MOSFET with a TO262 package type. Designed for high current and low on-resistance applications, it has a maximum drain-source voltage (VDS) of 100V and can withstand a drain current of up to 100A. This MOSFET supports a gate-source voltage (VGS) of ±20V and its turn-on threshold voltage is 2.5V. Using Trench technology, the IPI80CN10N G-VB has extremely low on-resistance of 10mΩ (@VGS=4.5V) and 9mΩ (@VGS=10V). This feature makes it excel in high-efficiency current handling and power conversion applications, and is ideal for high-performance power management.
IPI80CN10N G-VB is a high-performance single N-channel MOSFET with a TO262 package type. Designed for high current and low on-resistance applications, it has a maximum drain-source voltage (VDS) of 100V and can withstand a drain current of up to 100A. This MOSFET supports a gate-source voltage (VGS) of ±20V and its turn-on threshold voltage is 2.5V. Using Trench technology, the IPI80CN10N G-VB has extremely low on-resistance of 10mΩ (@VGS=4.5V) and 9mΩ (@VGS=10V). This feature makes it excel in high-efficiency current handling and power conversion applications, and is ideal for high-performance power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Application areas and modules:
1. **High-efficiency power management**: The low on-resistance and high current handling capability of IPI80CN10N G-VB make it outstanding in high-efficiency power management systems. It is suitable for power conversion modules such as high-power DC-DC converters and AC-DC converters, helping to reduce power consumption and improve overall system efficiency.
2. **Motor drive**: In electric vehicles, power tools and industrial motor control systems, this MOSFET can effectively drive high-current motors to ensure stable and efficient motor operation.
3. **Switching power supply module**: This MOSFET can be used in switching power supply modules such as computer power supplies and battery chargers. Its low on-resistance reduces switching losses and improves the performance and reliability of the power supply.
4. **Load switch**: In load switch applications that require high current and low power consumption, such as power management systems and high-power load control, IPI80CN10N G-VB can provide efficient switching operation to ensure system stability and performance.
5. **Automotive Electronics**: In automotive electronic systems, including battery management systems (BMS) and electric power steering systems, this MOSFET is able to handle large current demands, provide reliable current control and efficient power management, and support stable operation and high performance of automotive electronic systems.
1. **High-efficiency power management**: The low on-resistance and high current handling capability of IPI80CN10N G-VB make it outstanding in high-efficiency power management systems. It is suitable for power conversion modules such as high-power DC-DC converters and AC-DC converters, helping to reduce power consumption and improve overall system efficiency.
2. **Motor drive**: In electric vehicles, power tools and industrial motor control systems, this MOSFET can effectively drive high-current motors to ensure stable and efficient motor operation.
3. **Switching power supply module**: This MOSFET can be used in switching power supply modules such as computer power supplies and battery chargers. Its low on-resistance reduces switching losses and improves the performance and reliability of the power supply.
4. **Load switch**: In load switch applications that require high current and low power consumption, such as power management systems and high-power load control, IPI80CN10N G-VB can provide efficient switching operation to ensure system stability and performance.
5. **Automotive Electronics**: In automotive electronic systems, including battery management systems (BMS) and electric power steering systems, this MOSFET is able to handle large current demands, provide reliable current control and efficient power management, and support stable operation and high performance of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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