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IPI70N04S4-06-VB Product details
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1. IPI70N04S4-06-VB Product Introduction
IPI70N04S4-06-VB is a high-performance N-channel power MOSFET in TO262 package. This MOSFET is designed to handle a drain-source voltage (VDS) of 60V and a drain current (ID) of up to 75A. It uses advanced Trench technology to achieve an extremely low on-resistance of only 5.7mΩ (at VGS=10V). Its gate threshold voltage (Vth) is 2V, which is suitable for low gate drive voltage applications. IPI70N04S4-06-VB is widely used in power management, motor drive, load switching and other fields with its excellent performance and high efficiency.
IPI70N04S4-06-VB is a high-performance N-channel power MOSFET in TO262 package. This MOSFET is designed to handle a drain-source voltage (VDS) of 60V and a drain current (ID) of up to 75A. It uses advanced Trench technology to achieve an extremely low on-resistance of only 5.7mΩ (at VGS=10V). Its gate threshold voltage (Vth) is 2V, which is suitable for low gate drive voltage applications. IPI70N04S4-06-VB is widely used in power management, motor drive, load switching and other fields with its excellent performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI70N04S4-06-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single channel N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
- **Power consumption**: The specific power consumption depends on the heat dissipation conditions in the application
- **Switching speed**: Fast switching performance, suitable for high frequency applications
- **Package type**: TO262
- **Configuration**: Single channel N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 5.7mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
- **Power consumption**: The specific power consumption depends on the heat dissipation conditions in the application
- **Switching speed**: Fast switching performance, suitable for high frequency applications
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency DC-DC converters**
The low on-resistance and high current handling capability of IPI70N04S4-06-VB make it an ideal choice for high-efficiency DC-DC converters. In data center power supplies, communication equipment, and high-performance electronic systems, this MOSFET can significantly improve power conversion efficiency and reduce energy losses.
2. **Motor drive system**
In motor drive applications, this MOSFET can be used as a power switch in motor control circuits. Its high current capability and low on-resistance ensure high efficiency and reliability of motor control systems, suitable for power tools, electric vehicles, and industrial automation equipment.
3. **Power switch and load control**
IPI70N04S4-06-VB performs well in power switch and load control applications, especially in scenarios requiring high current and low power consumption. Its low on-resistance makes it the preferred choice for high-efficiency load switches, and is widely used in consumer electronics, battery management systems, and load control in communication equipment.
4. **Automotive Electronic Systems**
In automotive electronic applications, IPI70N04S4-06-VB can be used for power switching and power management. Its high current handling capability and low on-resistance meet the requirements of automotive power modules and drive control systems for high efficiency and reliability, and is suitable for automotive electronic control units (ECUs), electric vehicle drive systems, and power protection circuits.
The excellent performance and high efficiency of IPI70N04S4-06-VB make it suitable for a variety of high current and low power consumption applications, providing a stable and reliable switch control solution.
1. **High-efficiency DC-DC converters**
The low on-resistance and high current handling capability of IPI70N04S4-06-VB make it an ideal choice for high-efficiency DC-DC converters. In data center power supplies, communication equipment, and high-performance electronic systems, this MOSFET can significantly improve power conversion efficiency and reduce energy losses.
2. **Motor drive system**
In motor drive applications, this MOSFET can be used as a power switch in motor control circuits. Its high current capability and low on-resistance ensure high efficiency and reliability of motor control systems, suitable for power tools, electric vehicles, and industrial automation equipment.
3. **Power switch and load control**
IPI70N04S4-06-VB performs well in power switch and load control applications, especially in scenarios requiring high current and low power consumption. Its low on-resistance makes it the preferred choice for high-efficiency load switches, and is widely used in consumer electronics, battery management systems, and load control in communication equipment.
4. **Automotive Electronic Systems**
In automotive electronic applications, IPI70N04S4-06-VB can be used for power switching and power management. Its high current handling capability and low on-resistance meet the requirements of automotive power modules and drive control systems for high efficiency and reliability, and is suitable for automotive electronic control units (ECUs), electric vehicle drive systems, and power protection circuits.
The excellent performance and high efficiency of IPI70N04S4-06-VB make it suitable for a variety of high current and low power consumption applications, providing a stable and reliable switch control solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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