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IPI530N15N3 G-VB Product details
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Product Introduction
IPI530N15N3 G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 150V, gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, on-resistance is 30mΩ at VGS=10V, and it can support drain current (ID) up to 50A. Based on advanced Trench technology, this MOSFET has low on-resistance and excellent current handling capability, and is suitable for high-power applications such as power conversion, load switching and electric vehicles.
IPI530N15N3 G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 150V, gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, on-resistance is 30mΩ at VGS=10V, and it can support drain current (ID) up to 50A. Based on advanced Trench technology, this MOSFET has low on-resistance and excellent current handling capability, and is suitable for high-power applications such as power conversion, load switching and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 30mΩ @ VGS=10V
7. **Drain current (ID)**: 50A
8. **Technology**: Trench technology
9. **Total gate charge (Qg)**: Medium, suitable for fast switching
10. **Power dissipation (Ptot)**: Suitable for high power applications
11. **Operating temperature range**: -55°C to 175°C
12. **Junction temperature (Tj)**: Can withstand high temperature operation
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 30mΩ @ VGS=10V
7. **Drain current (ID)**: 50A
8. **Technology**: Trench technology
9. **Total gate charge (Qg)**: Medium, suitable for fast switching
10. **Power dissipation (Ptot)**: Suitable for high power applications
11. **Operating temperature range**: -55°C to 175°C
12. **Junction temperature (Tj)**: Can withstand high temperature operation
Domain and module applications：
Applicable fields and modules
1. **Switching power supply and power management**: IPI530N15N3 G-VB has excellent performance in high-efficiency switching power supply and power management modules. Due to its high drain-source voltage of 150V and low on-resistance, this MOSFET can improve power conversion efficiency and reduce power loss, and is suitable for use in DC-DC converters, AC-DC switching power supplies and other scenarios.
2. **Electric vehicles and charging infrastructure**: In the drive control system of electric vehicles, the high voltage and high current capabilities of this MOSFET make it particularly suitable for power switching applications in battery management systems and power systems. In addition, it also performs well in electric vehicle charging infrastructure and can withstand high voltage and high current requirements.
3. **Industrial control and motor drive**: The application of IPI530N15N3 G-VB in the field of industrial control includes motor drive and load switching. Its high current carrying capacity and low on-resistance enable it to provide efficient switching performance and reliability when controlling high-power motors.
4. **Photovoltaic inverter**: In photovoltaic inverters, this MOSFET can be used for power conversion and distribution. By handling high voltage and high current, it can achieve more efficient power utilization and improve the overall energy efficiency of the system.
The high voltage handling capability and stable on-resistance of the IPI530N15N3 G-VB make it excellent in applications that require high efficiency and high power control, especially suitable for power conversion, automotive electronics and industrial control.
1. **Switching power supply and power management**: IPI530N15N3 G-VB has excellent performance in high-efficiency switching power supply and power management modules. Due to its high drain-source voltage of 150V and low on-resistance, this MOSFET can improve power conversion efficiency and reduce power loss, and is suitable for use in DC-DC converters, AC-DC switching power supplies and other scenarios.
2. **Electric vehicles and charging infrastructure**: In the drive control system of electric vehicles, the high voltage and high current capabilities of this MOSFET make it particularly suitable for power switching applications in battery management systems and power systems. In addition, it also performs well in electric vehicle charging infrastructure and can withstand high voltage and high current requirements.
3. **Industrial control and motor drive**: The application of IPI530N15N3 G-VB in the field of industrial control includes motor drive and load switching. Its high current carrying capacity and low on-resistance enable it to provide efficient switching performance and reliability when controlling high-power motors.
4. **Photovoltaic inverter**: In photovoltaic inverters, this MOSFET can be used for power conversion and distribution. By handling high voltage and high current, it can achieve more efficient power utilization and improve the overall energy efficiency of the system.
The high voltage handling capability and stable on-resistance of the IPI530N15N3 G-VB make it excellent in applications that require high efficiency and high power control, especially suitable for power conversion, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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