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IPI50CN10N G-VB Product details
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Product Introduction:
IPI50CN10N G-VB is a high-performance single N-channel MOSFET in TO262 package based on advanced Trench technology. The device has a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 100A, with excellent current handling capabilities. Its gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 2.5V, ensuring fast turn-on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 10mΩ@VGS=4.5V and 9mΩ@VGS=10V, respectively, which greatly reduces switching losses and is very suitable for applications requiring low power consumption and high-efficiency switching.
IPI50CN10N G-VB is a high-performance single N-channel MOSFET in TO262 package based on advanced Trench technology. The device has a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 100A, with excellent current handling capabilities. Its gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 2.5V, ensuring fast turn-on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 10mΩ@VGS=4.5V and 9mΩ@VGS=10V, respectively, which greatly reduces switching losses and is very suitable for applications requiring low power consumption and high-efficiency switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power tools and industrial automation**: IPI50CN10N G-VB plays a key role in power tools and industrial automation systems. Its high current carrying capacity and low on-resistance can improve the working efficiency of power tools and reduce energy consumption. In industrial automation equipment, this MOSFET can be used as a key component of the motor driver to provide efficient and stable power control for mechanical equipment.
2. **Battery management system**: In battery management systems, this MOSFET is widely used in battery protection and charge and discharge control due to its high current handling capability and low power consumption design. Its stable on-resistance ensures the efficient operation of the battery system and extends the battery life, which is suitable for electric vehicles and renewable energy systems.
3. **Uninterruptible power supply (UPS) system**: In UPS systems, this MOSFET can take on the responsibility of high-power switching to ensure fast response in the event of a grid failure. Its high current capability and low on-resistance can improve the conversion efficiency of the system and ensure stable operation of the equipment during power outages.
4. **Photovoltaic Inverter**: IPI50CN10N G-VB is suitable for the power conversion link in photovoltaic inverters. Its excellent high-voltage and high-current handling capabilities can improve the power generation efficiency of photovoltaic systems, reduce power losses, and ensure stable output under various conditions.
With excellent performance and diverse application scenarios, IPI50CN10N G-VB is an indispensable component in high-efficiency switching power supplies, high-power inverters, and industrial control systems, and can provide reliable technical support for various power conversion and control equipment.
1. **Power tools and industrial automation**: IPI50CN10N G-VB plays a key role in power tools and industrial automation systems. Its high current carrying capacity and low on-resistance can improve the working efficiency of power tools and reduce energy consumption. In industrial automation equipment, this MOSFET can be used as a key component of the motor driver to provide efficient and stable power control for mechanical equipment.
2. **Battery management system**: In battery management systems, this MOSFET is widely used in battery protection and charge and discharge control due to its high current handling capability and low power consumption design. Its stable on-resistance ensures the efficient operation of the battery system and extends the battery life, which is suitable for electric vehicles and renewable energy systems.
3. **Uninterruptible power supply (UPS) system**: In UPS systems, this MOSFET can take on the responsibility of high-power switching to ensure fast response in the event of a grid failure. Its high current capability and low on-resistance can improve the conversion efficiency of the system and ensure stable operation of the equipment during power outages.
4. **Photovoltaic Inverter**: IPI50CN10N G-VB is suitable for the power conversion link in photovoltaic inverters. Its excellent high-voltage and high-current handling capabilities can improve the power generation efficiency of photovoltaic systems, reduce power losses, and ensure stable output under various conditions.
With excellent performance and diverse application scenarios, IPI50CN10N G-VB is an indispensable component in high-efficiency switching power supplies, high-power inverters, and industrial control systems, and can provide reliable technical support for various power conversion and control equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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