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IPI47N10SL-26-VB Product details
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IPI47N10SL-26-VB MOSFET Product Introduction
The IPI47N10SL-26-VB is a high-performance N-channel power MOSFET in a TO262 package. Designed with a focus on efficient power management, it is capable of handling drain-source voltages (VDS) up to 100V and providing a high current load capability of 50A. The device has a gate-source voltage (VGS) range of ±20V and a gate threshold voltage of 2V, ensuring stable operation under a variety of switching conditions. With a low on-resistance of 20mΩ (RDS(ON) @ VGS = 10V), this MOSFET uses advanced Trench technology and is suitable for a variety of high-efficiency power conversion and electric system applications.
The IPI47N10SL-26-VB is a high-performance N-channel power MOSFET in a TO262 package. Designed with a focus on efficient power management, it is capable of handling drain-source voltages (VDS) up to 100V and providing a high current load capability of 50A. The device has a gate-source voltage (VGS) range of ±20V and a gate threshold voltage of 2V, ensuring stable operation under a variety of switching conditions. With a low on-resistance of 20mΩ (RDS(ON) @ VGS = 10V), this MOSFET uses advanced Trench technology and is suitable for a variety of high-efficiency power conversion and electric system applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IPI47N10SL-26-VB Detailed parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
7. **Drain current (ID)**: 50A
8. **Maximum pulse current (ID, pulse)**: Up to 200A
9. **Power dissipation (Ptot)**: Typical value is 300W
10. **Technology type**: Trench
11. **Input capacitance (Ciss)**: Approx. 2400pF
12. **Gate charge (Qg)**: Typical value is 85nC
13. **Reverse recovery time (Trr)**: Typical value is 40ns
14. **Operating temperature range**: -55°C to 175°C
15. **Maximum junction temperature (Tj)**: 175°C
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2V
6. **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
7. **Drain current (ID)**: 50A
8. **Maximum pulse current (ID, pulse)**: Up to 200A
9. **Power dissipation (Ptot)**: Typical value is 300W
10. **Technology type**: Trench
11. **Input capacitance (Ciss)**: Approx. 2400pF
12. **Gate charge (Qg)**: Typical value is 85nC
13. **Reverse recovery time (Trr)**: Typical value is 40ns
14. **Operating temperature range**: -55°C to 175°C
15. **Maximum junction temperature (Tj)**: 175°C
Domain and module applications：
Applications and module examples
1. **Electric Vehicle (EV) Power Management System**:
IPI47N10SL-26-VB performs well in electric vehicle systems, especially in motor drive, power distribution and energy management modules. Its high drain-source voltage of 100V and high current handling capability of 50A enable it to provide efficient and stable operation in high-performance electric vehicle power management systems, reduce power loss and extend battery life.
2. **Solar Inverter**:
In solar power generation systems, this MOSFET can be used in inverter modules to achieve efficient DC to AC power conversion. Its low on-resistance and fast switching capability ensure efficient energy transmission, thereby improving the overall efficiency of the solar system.
3. **High-efficiency DC-DC converter**:
IPI47N10SL-26-VB is suitable for various DC-DC power converters. Its excellent performance in high-frequency switching applications makes it widely used in occasions requiring high-efficiency conversion, especially in communication equipment, server power modules and industrial power systems.
4. **Industrial motor drive system**:
In industrial control and automation, this MOSFET can be used in motor drive modules to ensure high power and efficient current transmission, suitable for demanding industrial environments, and ensure the stability and reliability of equipment.
With its strong current handling capability, low on-resistance and high voltage tolerance, IPI47N10SL-26-VB is widely used in power conversion, industrial control, electric vehicles and other fields requiring high efficiency.
1. **Electric Vehicle (EV) Power Management System**:
IPI47N10SL-26-VB performs well in electric vehicle systems, especially in motor drive, power distribution and energy management modules. Its high drain-source voltage of 100V and high current handling capability of 50A enable it to provide efficient and stable operation in high-performance electric vehicle power management systems, reduce power loss and extend battery life.
2. **Solar Inverter**:
In solar power generation systems, this MOSFET can be used in inverter modules to achieve efficient DC to AC power conversion. Its low on-resistance and fast switching capability ensure efficient energy transmission, thereby improving the overall efficiency of the solar system.
3. **High-efficiency DC-DC converter**:
IPI47N10SL-26-VB is suitable for various DC-DC power converters. Its excellent performance in high-frequency switching applications makes it widely used in occasions requiring high-efficiency conversion, especially in communication equipment, server power modules and industrial power systems.
4. **Industrial motor drive system**:
In industrial control and automation, this MOSFET can be used in motor drive modules to ensure high power and efficient current transmission, suitable for demanding industrial environments, and ensure the stability and reliability of equipment.
With its strong current handling capability, low on-resistance and high voltage tolerance, IPI47N10SL-26-VB is widely used in power conversion, industrial control, electric vehicles and other fields requiring high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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