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IPI47N10S-33-VB Product details
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IPI47N10S-33-VB MOSFET Product Introduction
The IPI47N10S-33-VB is a single N-channel MOSFET in a TO262 package, designed for high current and medium voltage applications. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 2V, ensuring good turn-on performance under various voltage conditions. Its on-resistance is 20mΩ (VGS=10V) and it can handle drain currents up to 50A. This MOSFET uses advanced Trench technology to optimize switching performance and power consumption, making it ideal for applications requiring efficient switching.
The IPI47N10S-33-VB is a single N-channel MOSFET in a TO262 package, designed for high current and medium voltage applications. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 2V, ensuring good turn-on performance under various voltage conditions. Its on-resistance is 20mΩ (VGS=10V) and it can handle drain currents up to 50A. This MOSFET uses advanced Trench technology to optimize switching performance and power consumption, making it ideal for applications requiring efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench MOSFET technology
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Applications and module examples
1. **Power conversion applications**: IPI47N10S-33-VB is ideal for power conversion modules such as switch mode power supplies (SMPS) and DC-DC converters. These modules typically need to efficiently convert power across different voltage ranges, and the low on-resistance and high current carrying capacity of this MOSFET ensure low power loss and high efficiency.
2. **Battery Management System (BMS)**: This MOSFET can be used in protection and control circuits in battery management systems, especially in electric vehicles, renewable energy and energy storage systems, responsible for handling high currents and ensuring safe and efficient charging and discharging of batteries.
3. **Motor control drive**: The high current capability and low on-resistance of IPI47N10S-33-VB make it ideal for motor drive applications, especially in industrial and automotive motor drive modules that require high efficiency and stable operation. It optimizes the energy consumption of the motor while providing excellent load control performance.
4. **Load switch and protection circuit**: This MOSFET can also be widely used in load switches and protection circuits, especially for high-power load control and switching requirements. This makes it have broad application prospects in industrial equipment and power distribution systems.
IPI47N10S-33-VB is very suitable for applications such as efficient power management, power conversion and motor control due to its excellent performance in on-resistance, current carrying capacity and switching performance, especially in load management and power conversion modules in the industrial and automotive fields.
1. **Power conversion applications**: IPI47N10S-33-VB is ideal for power conversion modules such as switch mode power supplies (SMPS) and DC-DC converters. These modules typically need to efficiently convert power across different voltage ranges, and the low on-resistance and high current carrying capacity of this MOSFET ensure low power loss and high efficiency.
2. **Battery Management System (BMS)**: This MOSFET can be used in protection and control circuits in battery management systems, especially in electric vehicles, renewable energy and energy storage systems, responsible for handling high currents and ensuring safe and efficient charging and discharging of batteries.
3. **Motor control drive**: The high current capability and low on-resistance of IPI47N10S-33-VB make it ideal for motor drive applications, especially in industrial and automotive motor drive modules that require high efficiency and stable operation. It optimizes the energy consumption of the motor while providing excellent load control performance.
4. **Load switch and protection circuit**: This MOSFET can also be widely used in load switches and protection circuits, especially for high-power load control and switching requirements. This makes it have broad application prospects in industrial equipment and power distribution systems.
IPI47N10S-33-VB is very suitable for applications such as efficient power management, power conversion and motor control due to its excellent performance in on-resistance, current carrying capacity and switching performance, especially in load management and power conversion modules in the industrial and automotive fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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