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IPI35CN10N G-VB Product details
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1. IPI35CN10N G-VB Product Introduction
IPI35CN10N G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high voltage applications. With a maximum drain-source voltage of 100V and a drain current capability of up to 100A, the device is suitable for applications requiring high power switching and high efficiency conversion. With low on-resistance and Trench technology, IPI35CN10N G-VB has excellent performance in power conversion efficiency and thermal management, and is widely used in automotive, industrial, power management and other fields.
IPI35CN10N G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high voltage applications. With a maximum drain-source voltage of 100V and a drain current capability of up to 100A, the device is suitable for applications requiring high power switching and high efficiency conversion. With low on-resistance and Trench technology, IPI35CN10N G-VB has excellent performance in power conversion efficiency and thermal management, and is widely used in automotive, industrial, power management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI35CN10N G-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Features**: low on-resistance, high current carrying capacity, fast switching performance, suitable for high-frequency applications.
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Features**: low on-resistance, high current carrying capacity, fast switching performance, suitable for high-frequency applications.
Domain and module applications：
III. Application fields and module examples of IPI35CN10N G-VB
1. **Power management of electric vehicles**: This MOSFET is suitable for power conversion and motor control systems in electric vehicles due to its excellent power handling capability and fast response time. Its low on-resistance reduces the power consumption of the system and improves the overall energy efficiency of electric vehicles.
2. **Solar inverter**: In solar panels and energy storage systems, IPI35CN10N G-VB can be used as an efficient power switching element in the inverter. Its high drain current capability and low on-resistance enable it to operate under high voltage and high current conditions, thereby improving the power conversion efficiency of the system.
3. **Industrial control system**: In industrial applications, IPI35CN10N G-VB is widely used in motor drives, power converters, and high-power load control. Its efficient current control capability and reliable switching performance make it suitable for use in complex industrial environments.
4. **DC-DC Converter**: This MOSFET is suitable for high-power DC-DC converters. Its low on-resistance and high current carrying capacity enable it to handle high-power conversion applications such as server power supplies, data center equipment, etc., ensuring efficient power management and power supply.
The versatility of this device makes it suitable for a variety of scenarios that require efficient power management and power conversion, especially under high voltage and high current conditions, which can effectively improve the performance and energy efficiency of the equipment.
1. **Power management of electric vehicles**: This MOSFET is suitable for power conversion and motor control systems in electric vehicles due to its excellent power handling capability and fast response time. Its low on-resistance reduces the power consumption of the system and improves the overall energy efficiency of electric vehicles.
2. **Solar inverter**: In solar panels and energy storage systems, IPI35CN10N G-VB can be used as an efficient power switching element in the inverter. Its high drain current capability and low on-resistance enable it to operate under high voltage and high current conditions, thereby improving the power conversion efficiency of the system.
3. **Industrial control system**: In industrial applications, IPI35CN10N G-VB is widely used in motor drives, power converters, and high-power load control. Its efficient current control capability and reliable switching performance make it suitable for use in complex industrial environments.
4. **DC-DC Converter**: This MOSFET is suitable for high-power DC-DC converters. Its low on-resistance and high current carrying capacity enable it to handle high-power conversion applications such as server power supplies, data center equipment, etc., ensuring efficient power management and power supply.
The versatility of this device makes it suitable for a variety of scenarios that require efficient power management and power conversion, especially under high voltage and high current conditions, which can effectively improve the performance and energy efficiency of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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