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IPI320N20N3 G-VB Product details
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1. IPI320N20N3 G-VB Product Introduction
IPI320N20N3 G-VB is a high voltage, unipolar N-channel MOSFET in TO262 package, designed for high current and medium to high voltage power switching and control applications. It has a drain-source breakdown voltage of up to 200V and a maximum drain current of 45A. It uses Trench technology to ensure low on-resistance and efficient switching performance under high voltage conditions. IPI320N20N3 G-VB is suitable for a variety of high-power electronic modules and can provide stable performance under harsh electrical conditions.
IPI320N20N3 G-VB is a high voltage, unipolar N-channel MOSFET in TO262 package, designed for high current and medium to high voltage power switching and control applications. It has a drain-source breakdown voltage of up to 200V and a maximum drain current of 45A. It uses Trench technology to ensure low on-resistance and efficient switching performance under high voltage conditions. IPI320N20N3 G-VB is suitable for a variety of high-power electronic modules and can provide stable performance under harsh electrical conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI320N20N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench (trench technology)
- **Package type**: TO262
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench (trench technology)
Domain and module applications：
III. Application fields and module examples
1. **Photovoltaic inverter**:
In photovoltaic power generation systems, the inverter needs to handle the conversion of high voltage and high current. The 200V withstand voltage and low on-resistance of IPI320N20N3 G-VB enable it to work in high-efficiency photovoltaic inverters, thereby maximizing the efficiency of power conversion.
2. **Industrial motor drive**:
The application of this MOSFET in industrial motor drive is particularly prominent, especially in environments that require precise control of high current. The high current carrying capacity and fast switching performance of IPI320N20N3 G-VB enable it to provide excellent efficiency and reliability in industrial motor control modules.
3. **Switching power supply (SMPS)**:
In switching power supply design, this MOSFET provides fast switching response and low energy consumption, especially in medium and high power DC-DC converters and AC-DC converters, which helps to improve the overall efficiency of the system.
4. **Power tools and electric vehicle charging equipment**:
Power tools and charging equipment require MOSFETs that can handle high current and fast switching. The IPI320N20N3 G-VB can meet these needs, ensuring efficient power transmission and stable circuit performance, extending the service life of the equipment.
This product is well suited for industrial and consumer electronic applications that require high voltage, high current switching and control, and can provide reliable power management in a variety of high-performance circuits.
1. **Photovoltaic inverter**:
In photovoltaic power generation systems, the inverter needs to handle the conversion of high voltage and high current. The 200V withstand voltage and low on-resistance of IPI320N20N3 G-VB enable it to work in high-efficiency photovoltaic inverters, thereby maximizing the efficiency of power conversion.
2. **Industrial motor drive**:
The application of this MOSFET in industrial motor drive is particularly prominent, especially in environments that require precise control of high current. The high current carrying capacity and fast switching performance of IPI320N20N3 G-VB enable it to provide excellent efficiency and reliability in industrial motor control modules.
3. **Switching power supply (SMPS)**:
In switching power supply design, this MOSFET provides fast switching response and low energy consumption, especially in medium and high power DC-DC converters and AC-DC converters, which helps to improve the overall efficiency of the system.
4. **Power tools and electric vehicle charging equipment**:
Power tools and charging equipment require MOSFETs that can handle high current and fast switching. The IPI320N20N3 G-VB can meet these needs, ensuring efficient power transmission and stable circuit performance, extending the service life of the equipment.
This product is well suited for industrial and consumer electronic applications that require high voltage, high current switching and control, and can provide reliable power management in a variety of high-performance circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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